TC3879 Datasheet, PDF (1/2 Pages) Transcom, Inc. – 7 W Packaged Single-Bias PHEMT GaAs Power FETs

Preliminary
TC3879
PRE1_20070518
7 W Packaged Single-Bias PHEMT GaAs Power FETs
FEATURES
! 7W Typical Output Power
! 10.5dB Typical Linear Power Gain at 2.45 GHz
! High Linearity: IP3 = 48.5 dBm Typical
! High Power Added Efficiency: Nominal PAE of 35%
! Breakdown Voltage: BV_DGO ≥ 18V
! 100 % DC Tested
! Suitable for High Reliability Application
PHOTO ENLARGEMENT
DESCRIPTION
The TC3879 is a self-bias flange ceramic packaged device with PHEMT GaAs FETs, which is designed to
provide the single power supply. The flange ceramic package provides excellent thermal conductivity for the
GaAs FET. The device is suitable for oscillators and power amplifiers in a wide range of commercial application.
All devices are 100% DC tested to assure consistent quality.
ELECTRICAL SPECIFICATIONS (@ 2.45 GHz)
Symbol
CONDITIONS
MIN
TYP
MAX
UNIT
P_1dB Output Power at 1dB Gain Compression Point V_DS = 10 V
38.5
dBm
G_L Linear Power Gain V_DS = 10 V
10.5
dB
IP3 Intercept Point of the 3^rd-order Intermodulation V_DS = 10 V, *P_SCL = 27 dBm
48.5
dBm
PAE Power Added Efficiency at 1dB Compression Power
35
%
I_DS
BV_DGO
R_th
Drain-Source Current at V_DS = 10 V
Drain-Gate Breakdown Voltage at I_DGO = 7.5mA
Thermal Resistance
1750
18
22
1.8
mA
Volts
°C/W
Note: *P_SCL: Output Power of Single Carrier Level.
TRANSCOM, INC., 90 Dasoong 7^th Road, Tainan Science-Based Industrial Park, Hsin-She Shiang, Tainan County, Taiwan, R.O.C.
Web-Site: www.transcominc.com.tw
Phone: [phone]
Fax: [phone]
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