TC3873 Datasheet, PDF (1/3 Pages) Transcom, Inc. – 5.25 - 5.875 GHz 3W prematched FETs



5.25 – 5.875 GHz 3W prematched FETs
P^TRE^C2_2³00⁸81⁷02³4
FEATURES
z P_-1 dB: 34.5dBm
z Small Signal Gain: 11 dB
z Power Added Efficiency: 45 %
z IP3: 43.5 dBm
z Input/Output Prematched
z Bias condition: 750 mA @ 8 V
PHOTO ENLARGEMENT
DESCRIPTION
The TC3873 is a prematched GaAs PHEMT hybrid device. It is designed for use in low cost, high
volume, and 5.25~5.875 GHz 3W amplifiers. It provides a typical gain of 11dB and P1dB of
34.5dBm. The device is packed in a copper based ceramic 10 pins SMT packages. The copper based
carrier of the package allows direct soldering of the device to the PCB..
ELECTRICAL SPECIFICATIONS (T_A=25 °C)
Symbol
FREQ
SSG
P_-1 dB
IP3
VDD
IDD
Vg
,
Conditions
Frequency Range
Small Signal Gain
Output Power at 1 dB Gain Compression
Third Order Intercept Point @ P_SCL=21 dbm
Supply Voltage
Current Supply Without RF
Gate Voltage
Power Added Efficiency
MIN
5.25
10
33.5
42.5
-0.5
TYP
11
34.5
43.5
8
750
-1.0
45
MAX
5.875
-1.5
UNIT
GHz
dB
dBm
dBm
Volt
mA
Volt
%
Absolute Maximum Ratings
Symbol Parameter/Conditions
V_dd Drain-Source Voltage
P_in RF Input Power
P_t Power Dissipation
T_ch Operating Channel Temperature
T_STG Storage Temperature
Min.
27.5
11.5
-65
Max.
10
175
175
Units
Volts
dBm
W
°C
°C
Note:
1. This GaAs FET is susceptible to damage from
Electrostatic Discharge. Proper precautions
should be used when handling these devices.
2. Specifications subject to change without notice.
TRANSCOM, INC., 90 Dasoong 7^th Road, Tainan Science-Based Industrial Park, Hsin-She Shiang, Tainan County, Taiwan, R.O.C.
Web-Site: www.transcominc.com.tw
Phone: [phone]
Fax: [phone]
1/1