TC3843 Datasheet, PDF (1/3 Pages) Transcom, Inc. – 870~925 MHz Single-Bias GaAs Low Noise Amplifier

TC3843
REV0_20070808
870~925 MHz Single-Bias GaAs Low Noise Amplifier
FEATURES
PHOTO ENLARGEMENT
l 50 ohm matched for 870~925 MHz
l 24 dBm Typical P1dB
l 19 dB Typical Linear Power Gain
l 36 dBm Typical IP3
l 1.1 dB Typical noise figure
l Nominal PAE of 26%
l Breakdown Voltage: BV_DGO ≥ 15V
l 6.0 Volt single bias
l Suitable for High Reliability Application
DESCRIPTION
The TC3843 is a single -bias with 50 ohm matched GaAs FET. It is designed for low cost, high volume, applied
for 870~925 MHz low noise amplifiers. It provides noise figure of 1.1 dB, gain of 19 dB and P1dB of 24 dBm,
typically. The single positive drain bias is 6 V and the typical drain-source current is 160 mA. The device is
packaged in a copper based ceramic 10-pin SMT packages. The copper based carrier of the package allows direct
soldering of the device to the PCB.
ELECTRICAL SPECIFICATIONS (T_A=25 )
Symbol
CONDITIONS
MIN
TYP
MAX
UNIT
FREQ Frequency Range
870
925
MHz
P_1dB Output Power at 1dB Gain Compression Point, V_DS = 6 V
22
24
dBm
G_L Linear Power Gain, V_DS = 6 V
16
19
IP3 Intercept Point of the 3^rd-order Intermodulation, V_DS = 6 V, *P_SCL = 14 dBm
33
36
dB
dBm
NF Noise Figure, V_DS = 6 V
1.1
1.5
dB
PAE Power Added Efficiency at 1dB Compression Power
26
%
I_DS Drain-Source Current at V_DS = 6 V
BV_DGO Drain-Gate Breakdown Voltage at I_DGO = 0.6 mA
Note: *P_SCL: Output Power of Single Carrier Level.
160
220
mA
15
18
Volts
TRANSCOM, INC., 90 Dasoong 7^th Road, Tainan Science-Based Industrial Park, Hsin -She Shiang, Tainan County, Taiwan, R.O.C.
Web-Site: www.transcominc.com.tw
Phone: [phone]
Fax: [phone]
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