TC2997G Datasheet, PDF (1/3 Pages) Transcom, Inc. – 3.5 GHz 16WFlange Ceramic Packaged GaAs Power FETs

TC2997G
PRE2_20071107
Preliminary
3.5 GHz 16 W Flange Ceramic Packaged GaAs Power FETs
FEATURES
 16 W Typical Power at 3.5 GHz
 9 dB Typical Linear Power Gain at 3.5 GHz
 High Linearity: IP3 = 52 dBm Typical
 High Power Added Efficiency: Nominal PAE of 37 %
 100 % DC and RF Tested
 Flange Ceramic Package
 Suitable for WiMax and WLL applications
PHOTO ENLARGEMENT
DESCRIPTION
The TC2997G is a packaged Pseudomorphic High Electron Mobility Transistor (PHEMT) power
transistor. The flange ceramic package provides the best thermal conductivity for the GaAs FET. All
devices are 100% DC and RF tested to assure consistent quality. Typical applications include high
dynamic range power amplifier for commercial applications.
ELECTRICAL SPECIFICATIONS
Symbol
CONDITIONS
P_1dB Output Power at 1dB Gain Compression Point, Vd = 10V, Id = 4A, f=3.4 – 3.6GHz
G_L Linear Power Gain Vd = 10V, Id = 4A, f=3.4 – 3.6GHz
IP3 Intercept Point of the 3^rd-order Intermodulation, Vd = 10V, Id = 4A, f=3.4 – 3.6GHz, *PSCL = 32 dBm
PAE Power Added Efficiency at 1dB Compression Power
I_DSS
g_m
V_P
BV_DGO
R_th
Saturated Drain-Source Current at V_DS = 2 V, V_GS = 0 V
Transconductance at V_DS = 2 V, V_GS = 0 V
Pinch-off Voltage at V_DS = 2 V, I_D = 60 mA
Drain-Gate Breakdown Voltage at I_DGO =15 mA
Thermal Resistance
*P_SCL: Output Power of Single Carrier Level, delta frequency=5MHz.
MIN TYP MAX UNIT
41.5 42.5
dBm
8
9
dB
52
dBm
37
%
18.75
A
13500
mS
-1.7
Volts
20 22
Volts
0.6
C/W
ABSOLUTE MAXIMUM RATINGS at 25 C
Symbol
V_DS
V_GS
I_DS
P_in
P_T
T_CH
T_STG
Parameter
Drain-Source Voltage
Gate-Source Voltage
Drain Current
RF Input Power, CW
Continuous Dissipation
Channel Temperature
Storage Temperature
Rating
12 V
-5 V
I_DSS
37.5 dBm
150 W
175 C
- 65 C to +175 C
HANDLING PRECAUTIONS:
The user must operate in a clean, dry environment.
Electrostatic Discharge (ESD) precautions should
be observed at all stages of storage, handling,
assembly, and testing. The static discharge must be
less than 300V.
TRANSCOM, INC., 90 Dasoong 7^th Road, Tainan Science-Based Industrial Park, Shanhua Jen, Tainan County, Taiwan
Web-Site: www.transcominc.com.tw
Phone: [phone]
Fax: [phone]
P1/3