TC2997B Datasheet, PDF (1/3 Pages) Transcom, Inc. – 1.9 GHz 20 W Flange Ceramic Packaged GaAs Power FETs

TC2997B
REV0_20040412
1.9 GHz 20 W Flange Ceramic Packaged GaAs Power FETs
FEATURES
• 20W Typical Power at 1.9 GHz
• 12 dB Typical Linear Power Gain at 1.9 GHz
• High Linearity: IP3 = 52 dBm Typical
• High Power Added Efficiency: Nominal PAE of 40 %
• Suitable for High Reliability Application
• Lg = 1 µm, Wg = 50 mm
• 100 % DC and RF Tested
• Flange Ceramic Package
PHOTO ENLARGEMENT
DESCRIPTION
The TC2997B is a packaged Pseudomorphic High Electron Mobility Transistor (PHEMT) power transistor
with input prematched circuits. The flange ceramic package provides the best thermal conductivity for the
GaAs FET. All devices are 100% DC and RF tested to assure consistent quality. Typical applications
include high dynamic range power amplifier for commercials applications.
ELECTRICAL SPECIFICATIONS ( @ 1.9 GHz )
Symbol
CONDITIONS
MIN TYP MAX UNIT
P_1dB Output Power at 1dB Gain Compression Point V_DS = 10.5 V, I_DS = 5A
42
43
dBm
G_L Linear Power Gain V_DS = 10.5 V, I_DS = 5A
11
12
dB
IP3 Intercept Point of the 3^rd-order Intermodulation V_DS = 10.5 V, I_DS = 5A, *P_SCL = 32 dBm
52
dBm
PAE Power Added Efficiency at 1dB Compression Power
40
%
I_DSS
g_m
V_P
BV_DGO
R_th
Saturated Drain-Source Current at V_DS = 2 V, V_GS = 0 V
Transconductance at V_DS = 2 V, V_GS = 0 V
Pinch-off Voltage at V_DS = 2 V, I_D = 60 mA
Drain-Gate Breakdown Voltage at I_DGO =15 mA
Thermal Resistance
12.5
9000
-1.7
20
22
0.9
A
mS
Volts
Volts
°C/W
* P_SCL: Output Power of Single Carrier Level.
TRANSCOM, INC., 90 Dasoong 7^th Road, Tainan Science-Based Industrial Park, Hsin-She Shiang, Tainan County, Taiwan, R.O.C.
Web-Site: www.transcominc.com.tw
Phone: [phone]
Fax: [phone]
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