TC2997A Datasheet, PDF (1/2 Pages) Transcom, Inc. – 1.6 GHz 20 W Flange Ceramic Packaged GaAs Power FETs

Preliminary
TC2997A
PRE4_20050708
1.6 GHz 20 W Flange Ceramic Packaged GaAs Power FETs
FEATURES
• 20 W Typical Power at 1.6 GHz
• 13 dB Typical Linear Power Gain at 1.6 GHz
• High Linearity: IP3 = 52 dBm Typical
• High Power Added Efficiency: Nominal PAE of 40 %
• Suitable for High Reliability Application
• Wg = 50 mm
• 100 % DC and RF Tested
• Flange Ceramic Package
PHOTO ENLARGEMENT
DESCRIPTION
The TC2997A is a packaged Pseudomorphic High Electron Mobility Transistor (PHEMT) power transistor
with input prematched circuits. The flange ceramic package provides the best thermal conductivity for the
GaAs FET. All devices are 100% DC and RF tested to assure consistent quality. Typical applications include
high dynamic range power amplifiers for commercial applications.
ELECTRICAL SPECIFICATIONS ( VDS = 10.5, IDS = 5A @ 1.6GHz )
Symbol
CONDITIONS
P_1dB Output Power at 1dB Gain Compression Point
G_L Linear Power Gain
IP3 Intercept Point of the 3^rd-order Intermodulation*P_SCL = 32 dBm
PAE Power Added Efficiency at 1dB Compression Power
I_DSS
g_m
V_P
BV_DGO
R_th
Saturated Drain-Source Current at V_DS = 2 V, V_GS = 0 V
Transconductance at V_DS = 2 V, V_GS = 0 V
Pinch-off Voltage at V_DS = 2 V, I_D = 60 mA
Drain-Gate Breakdown Voltage at I_DGO =15 mA
Thermal Resistance
* P_SCL: Output Power of Single Carrier Level.
MIN
42
12
20
TYP
43
13
52
40
12.5
9000
-1.7
22
0.9
MAX
UNIT
dBm
dB
dBm
%
A
mS
Volts
Volts
°C/W
TRANSCOM, INC., 90 Dasoong 7^th Road, Tainan Science-Based Industrial Park, Hsin-She Shiang, Tainan County, Taiwan, R.O.C.
Web-Site: www.transcominc.com.tw
Phone: [phone]
Fax: [phone]
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