TC2591 Datasheet, PDF (1/3 Pages) Transcom, Inc. – 1 W Flange Ceramic Packaged PHEMT GaAs Power FETs

TC2591
REV4_20070507
1 W Flange Ceramic Packaged PHEMT GaAs Power FETs
FEATURES
• 1 W Typical Output Power at 6 GHz
• 12 dB Typical Linear Power Gain at 6 GHz
• High Linearity: IP3 = 40 dBm Typical at 6 GHz
• High Power Added Efficiency:
Nominal PAE of 43 % at 6 GHz
• Suitable for High Reliability Application
• Breakdown Voltage: BV_DGO ≥ 15 V
• Lg = 0.35 µm, Wg = 2.4 mm
• Tight Vp ranges control
• High RF input power handling capability
• 100 % DC Tested
• Flange Ceramic Package
PHOTO ENLARGEMENT
DESCRIPTION
The TC2591 is packaged with the TC1501 Pseudomorphic High Electron Mobility Transistor (PHEMT) chip.
The flange ceramic package provides the best thermal conductivity for the GaAs FET. All devices are 100% DC
and RF tested to assure consistent quality. Typical applications include high dynamic range power amplifiers
for commercial and military high performance power applications.
ELECTRICAL SPECIFICATIONS (T_A=25 °C)
Symbol
CONDITIONS
MIN TYP MAX UNIT
P_1dB Output Power at 1dB Gain Compression Point , f = 6GHz V_DS = 8 V, I_DS = 240 mA
29.5 30
G_L Linear Power Gain, f = 6GHz V_DS = 8 V, I_DS = 240 mA
11 12
IP3 Intercept Point of the 3^rd-order Intermodulation, f = 6GHz V_DS = 8 V, I_DS = 240 mA, *P_SCL = 17 dBm
40
PAE Power Added Efficiency at 1dB Compression Power, f = 6GHz
43
dBm
dB
dBm
%
I_DSS
g_m
V_P
BV_DGO
R_th
Saturated Drain-Source Current at V_DS = 2 V, V_GS = 0 V
Transconductance at V_DS = 2 V, V_GS = 0 V
Pinch-off Voltage at V_DS = 2 V, I_D = 4.8 mA
Drain-Gate Breakdown Voltage at I_DGO =1.2 mA
Thermal Resistance
600
400
-1.7**
15 18
18
mA
mS
Volts
Volts
°C/W
Note: * P_SCL: Output Power of Single Carrier Level.
** For the tight control of the pinch-off voltage range, we divide TC2591 into 3 model numbers to fit customer design requirement
(1)TC2591P1519 : Vp = -1.5V to -1.9V (2)TC2591P1620 : Vp = -1.6V to -2.0V (3)TC2591P1721 : Vp = -1.7V to -2.1V
If required, customer can specify the requirement in purchasing document. For special Vp requirement, please contact factory for details.
TRANSCOM, INC., 90 Dasoong 7^th Road, Tainan Science-Based Industrial Park, Hsin-She Shiang, Tainan County, Taiwan, R.O.C.
Web-Site: www.transcominc.com.tw
Phone: [phone]
Fax: [phone]
P1/3