TC2181 Datasheet, PDF (1/4 Pages) List of Unclassifed Manufacturers – Low Noise and High Dynamic Range Packaged GaAs FETs

TC2181
REV4_20070504
Low Noise and High Dynamic Range Packaged GaAs FETs
FEATURES
! 0.5 dB Typical Noise Figure at 12 GHz
! High Associated Gain: Ga = 12 dB Typical at 12 GHz
! 18.5 dBm Typical Power at 12 GHz
! 13 dB Typical Linear Power Gain at 12 GHz
! Breakdown Voltage : BV_DGO ≥ 9V
! Lg = 0.25 µm, Wg = 160 µm
! Tight Vp ranges control
! High RF input power handling capability
! 100 % DC Tested
! Micro-X Metal Ceramic Package
DESCRIPTION
PHOTO ENLARGEMENT
The TC2181 is a high performance field effect transistor housed in a ceramic micro-x package with TC1101
PHEMT Chip. It has very low noise figure, high associated gain and high dynamic range that makes this device
suitable for use in low noise amplifiers. All devices are 100 % DC tested to assure consistent quality.
ELECTRICAL SPECIFICATIONS (T_A=25 °C)
Symbol
CONDITIONS
MIN TYP MAX UNIT
NF Noise Figure at V_DS = 2 V, I_DS = 10 mA, f = 12GHz
0.5
0.7
dB
G_a Associated Gain at V_DS = 2 V, I_DS = 10 mA, f = 12GHz
10
12
dB
P_1dB Output Power at 1dB Gain Compression Point, f = 12 GHz V_DS = 6 V, I_DS = 25 mA 17.5
18.5
dBm
G_L Linear Power Gain, f = 12GHz V_DS = 6 V, I_DS = 25 mA
11
13
dB
I_DSS Saturated Drain-Source Current at V_DS = 2 V, V_GS = 0 V
48
mA
g_m Transconductance at V_DS = 2 V, V_GS = 0 V
55
mS
V_P Pinch-off Voltage at V_DS = 2 V, I_D = 0.32mA
-1.0*
Volts
BV_DGO Drain-Gate Breakdown Voltage at I_DGO = 0.08mA
9
12
Volts
R_th Thermal Resistance
250
°C/W
ABSOLUTE MAXIMUM RATINGS (T_A=25 °C) TYPICAL NOISE PARAMETERS (T_A=25 °C)
V_DS = 2 V, I_DS = 10 mA
Symbol
V_DS
V_GS
I_DS
I_GS
Parameter
Drain-Source Voltage
Gate-Source Voltage
Drain Current
Gate Current
Rating
7.0 V
-3.0 V
I_DSS
160 µA
Frequency
(GHz)
2
4
6
8
NF_opt
(dB)
0.33
0.35
0.37
0.40
G_A
(dB)
Γ_opt
MAG ANG
Rn/50
18.4
1.00
15
0.42
16.8
0.86
32
0.36
15.2
0.70
53
0.28
13.8
0.53
79
0.20
P_in
RF Input Power, CW
18 dBm
10
0.46
12.5
0.39 112
0.12
P_T
Continuous Dissipation
150 mW
12
0.52
11.5
0.29 153
0.09
T_CH
Channel Temperature
T_STG
Storage Temperature
175 °C
- 65 °C to +175 °C
14
0.61
11.0
0.26 202
0.08
16
0.77
10.9
0.32 262
0.11
18
0.95
10.6
0.51 332
0.24
* For the tight control of the pinch-off voltage range, we divide TC2181 into 3 model numbers to fit customer design requirement
(1)TC2181P0710 : Vp = -0.7V to -1.0V (2)TC2181P0811 : Vp = -0.8V to -1.1V (3)TC2181P0912 : Vp = -0.9V to -1.2V
If required, customer can specify the requirement in purchasing document. For special Vp requirement, please contact factory for details.
TRANSCOM, INC., 90 Dasoong 7^th Road, Tainan Science-Based Industrial Park, Hsin-She Shiang, Tainan County, Taiwan.
Web-Site: www.transcominc.com.tw
Phone: [phone]
Fax: [phone]
P1/4