TC1706 Datasheet, PDF (1/4 Pages) Transcom, Inc. – 3 W High Linearity and High Efficiency GaAs Power FETs

TC1706
REV5_20070502
3 W High Linearity and High Efficiency GaAs Power FETs
FEATURES
! 3W Typical Power at 6 GHz
! Linear Power Gain: G_L = 11 dB Typical at 6 GHz
! High Linearity: IP3 = 45 dBm Typical at 6 GHz
! Via Hole Source Ground
! Suitable for High Reliability Application
! Breakdown Voltage: BV_DGO ≥ 18 V
! Lg = 0.6 µm*, Wg = 7.5 mm
! High Power Added Efficiency: Nominal PAE of 43 % at 6 GHz
! Tight Vp ranges control
! High RF input power handling capability
! 100 % DC Tested
PHOTO ENLARGEMENT
DESCRIPTION
The TC1706 is a GaAs Pseudomorphic High Electron Mobility Transistor (PHEMT), which has high linearity and
high Power Added Efficiency. The device is processed with a propriety via-hole process, which provides low
thermal resistance and low inductance. The long gate length makes the device to have high breakdown voltage.
All devices are 100% DC tested to assure consistent quality. Bond pads are gold plated for either
thermo-compression or thermo-sonic wire bonding. Backside gold plating is compatible with standard AuSn
die-attach. Typical applications include commercial and military high performance power amplifiers.
ELECTRICAL SPECIFICATIONS (T_A=25 °C)
Symbol
Conditions
MIN TYP MAX UNIT
P_1dB Output Power at 1dB Gain Compression Point , f = 6 GHz V_DS = 8 V, I_DS = 750 mA
34.5 35.5
dBm
G_L Linear Power Gain , f = 6 GHz V_DS = 8 V, I_DS = 750 mA
10 11
dB
IP3 Intercept Point of the 3^rd-order Intermodulation, f = 6 GHz V_DS = 8V, I_DS = 750mA,**P_SCL = 21 dBm
45
dBm
PAE Power Added Efficiency at 1dB Compression Power, f = 6 GHz
43
%
I_DSS Saturated Drain-Source Current at V_DS = 2 V, V_GS = 0 V
g_m Transconductance at V_DS = 2 V, V_GS = 0 V
1.8
A
1275
mS
V_P Pinch-off Voltage at V_DS = 2 V, I_D = 15 mA
BV_DGO Drain-Gate Breakdown Voltage at I_DGO = 3.75 mA
-1.7***
18 22
Volts
Volts
R_th Thermal Resistance
4
°C/W
Note:
* FET with 0.35 µm gate length is available for high frequency operation. Please contact factory for detail.
** P_SCL: Output Power of Single Carrier Level.
*** For the tight control of the pinch-off voltage . TC1706’s are divided into 3 groups:
(1)TC1706P1519 : Vp = -1.5V to -1.9V (2) TC1706P1620 : Vp = -1.6V to -2.0V
(3)TC1706P1721 : Vp = -1.7V to -2.1V In addition, the customers may specify their requirements.
TRANSCOM, INC., 90 Dasoong 7^th Road, Tainan Science-Based Industrial Park, Hsin-She Shiang, Tainan County, Taiwan, R.O.C.
Web-Site: www.transcominc.com.tw
Phone: [phone]
Fax: [phone]
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