TC1606 Datasheet, PDF (1/4 Pages) Transcom, Inc. – 2W High Linearity and High Efficiency GaAs Power FETs

TC1606
REV5_20070502
2W High Linearity and High Efficiency GaAs Power FETs
FEATURES
! 2W Typical Power at 6 GHz
! Linear Power Gain: G_L = 12 dB Typical at 6 GHz
! High Linearity: IP3 = 43 dBm Typical at 6 GHz
! Via Hole Source Ground
! Suitable for High Reliability Application
! Breakdown Voltage: BV_DGO ≥ 18 V
! Lg = 0.6 µm, Wg = 5 mm
! High Power Added Efficiency: Nominal PAE of 43 % at 6 GHz
! Tight Vp ranges control
! High RF input power handling capability
! 100 % DC Tested
PHOTO ENLARGEMENT
DESCRIPTION
The TC1606 is a GaAs Pseudomorphic High Electron Mobility Transistor (PHEMT) which has high linearity and
high Power Added Efficiency. The device is processed with a propriety via-hole process, which provides low
thermal resistance and low inductance. The long gate length makes the device to have high breakdown voltage.
All devices are 100% DC tested to assure consistent quality. Bond pads are gold plated for either
thermo-compression or thermo-sonic wire bonding. Backside gold plating is compatible with standard AuSn
die-attach. Typical application include commercial and military high performance power amplifiers
ELECTRICAL SPECIFICATIONS (T_A=25 °C)
Symbol
Conditions
MIN
P_1dB Output Power at 1dB Gain Compression Point , f = 6 GHz V_DS = 8 V, I_DS = 500 mA
32.5
G_L Linear Power Gain, f = 6 GHz V_DS = 8 V, I_DS = 500 mA
11
IP3 Intercept Point of the 3^rd-order Intermodulation, f = 6 GHz V_DS = 8 V, I_DS = 500 mA,*P_SCL = 20 dBm
PAE Power Added Efficiency at 1dB Compression Power, f = 6 GHz
I_DSS Saturated Drain-Source Current at V_DS = 2 V, V_GS = 0 V
g_m Transconductance at V_DS = 2 V, V_GS = 0 V
V_P Pinch-off Voltage at V_DS = 2 V, I_D = 10 mA
BV_DGO Drain-Gate Breakdown Voltage at I_DGO = 2.5 mA
18
R_th Thermal Resistance
Note:
* P_SCL: Output Power of Single Carrier Level.
* *For the tight control of the pinch-off voltage . TC1606’s are divided into 3 groups:
(1)TC1606P1519 : Vp = -1.5V to -1.9V (2) TC1606P1620 : Vp = -1.6V to -2.0V
(3)TC1606P1721 : Vp = -1.7V to -2.1V In addition, the customers may specify their requirements.
TYP
33
12
43
43
1.2
850
-1.7**
22
6
MAX
UNIT
dBm
dB
dBm
%
A
mS
Volts
Volts
°C/W
TRANSCOM, INC., 90 Dasoong 7^th Road, Tainan Science-Based Industrial Park, Hsin-She Shiang, Tainan County, Taiwan, R.O.C.
Web-Site: www.transcominc.com.tw
Phone: [phone]
Fax: [phone]
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