TC1504N Datasheet, PDF (1/6 Pages) Transcom, Inc. – 1W High Linearity and High Efficiency GaAs Power FETs

TC1504N
REV2_20071108
1W High Linearity and High Efficiency GaAs Power FETs
FEATURES
l 1W Typical Power at 12 GHz
l Linear Power Gain: G_L = 9 dB Typical at 12 GHz
l High Linearity: IP3 = 40 dBm Typical at 12 GHz
l Non-Via Hole Source for Single-Bias Application
l Suitable for High Reliability Application
l Breakdown Voltage: BV_DGO ≥ 13.5 V
l Lg = 0.25 µm, Wg = 2.4 mm
l High Power Added Efficiency: Nominal PAE of 43% at 12 GHz
l Tight Vp ranges control
l High RF input power handling capability
l 100 % DC Tested
DESCRIPTION
PHOTO ENLARGEMENT
The TC1504N is a GaAs Pseudomorphic High Electron Mobility Transistor (PHEMT) which has high linearity
and high Power Added Efficiency. The device is processed without via -holes for single-bias applications. The
short gate length enables the device to be used in circuits up to 20GHz. All devices are 100% DC tested to assure
consistent quality. Bond pads are gold plated for either thermo-compression or thermo-sonic wire bonding.
Backside gold plating is compatible with standard AuSn die -attach. Typical application include commercial and
military high performance power amplifiers.
ELECTRICAL SPECIFICATIONS (T_A=25 ° C)
Symbol
Conditions
MIN TYP MAX UNIT
P_1dB Output Power at 1dB Gain Compression Point , f = 12 GHz V_DS = 8 V, I_DS = 240 mA
29.5 30
dBm
G_L Linear Power Gain, f = 12 GHz V_DS = 8 V, I_DS = 240 mA
9
dB
IP3 Intercept Point of the 3^rd-order Intermodulation, f = 12 GHz V_DS =8 V, I_DS =240 mA,*P_SCL=17dBm
40
dBm
PAE Power Added Efficiency at 1dB Compression Power, f = 12 GHz
43
%
I_DSS Saturated Drain -Source Current at V_DS = 2 V, V_GS = 0 V
g _m Transconductance at V_DS = 2 V, V_GS = 0 V
720
mA
520
mS
V_P Pinch-off Voltage at V_DS = 2 V, I_D = 4.8 mA
BV_DGO Drain-Gate Breakdown Voltage at I_DGO =1.2 mA
R_th Thermal Resistance
Note:
* P_SCL: Output Power of Single Carrier Level.
-1.7
13.5 15
12
Volts
Volts
°C/W
TRANSCOM, INC., 90 Dasoong 7^th Road, Tainan Science-Based Industrial Park, Hsin -She Shiang, Tainan County, Taiwan
Web-Site: www.transcominc.com.tw
Phone: [phone]
Fax: [phone]
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