TC1501N Datasheet, PDF (1/4 Pages) Transcom, Inc. – 1W High Linearity and High Efficiency GaAs Power FETs

TC1501N
REV4_20070502
1W High Linearity and High Efficiency GaAs Power FETs
FEATURES
! 1W Typical Power at 6 GHz
! Linear Power Gain: G_L = 12 dB Typical at 6 GHz
! High Linearity: IP3 = 40 dBm Typical at 6 GHz
! High Power Added Efficiency: Nominal PAE of 43% at 6 GHz
! Non-Via Hole Source for Self-Bias Application
! Suitable for High Reliability Application
! Breakdown Voltage: BV_DGO ≥ 15 V
! Lg = 0.35 µm, Wg = 2.4 mm
! Tight Vp ranges control
! High RF input power handling capability
! 100 % DC Tested
PHOTO ENLARGEMENT
DESCRIPTION
The TC1501N is a GaAs Pseudomorphic High Electron Mobility Transistor (PHEMT) which has high linearity
and high Power Added Efficiency. The device is processed without via-holes for self-bias applications. The short
gate length characteristic enables the device to be used in circuits up to 20GHz. All devices are 100% DC tested
to assure consistent quality. Bond pads are gold plated for either thermo-compression or thermo-sonic wire
bonding. Backside gold plating is compatible with standard AuSn die-attach. Typical application include
commercial and military high performance power amplifiers.
ELECTRICAL SPECIFICATIONS (T_A=25 °C)
Symbol
Conditions
MIN
P_1dB Output Power at 1dB Gain Compression Point , f = 6 GHz V_DS = 8 V, I_DS = 240 mA
29.5
G_L Linear Power Gain, f = 6 GHz V_DS = 8 V, I_DS = 240 mA
IP3 Intercept Point of the 3^rd-order Intermodulation, f = 6 GHz V_DS = 8 V, I_DS = 240 mA,*P_SCL = 17 dBm
PAE Power Added Efficiency at 1dB Compression Power, f = 6 GHz
I_DSS Saturated Drain-Source Current at V_DS = 2 V, V_GS = 0 V
g_m Transconductance at V_DS = 2 V, V_GS = 0 V
V_P Pinch-off Voltage at V_DS = 2 V, I_D = 4.8 mA
BV_DGO Drain-Gate Breakdown Voltage at I_DGO =1.2 mA
15
R_th Thermal Resistance
Note:
* P_SCL: Output Power of Single Carrier Level.
* For the tight control of the pinch-off voltage . TC1501N’s are divided into 3 groups:
(1)TC1501NP1519 : Vp = -1.5V to -1.9V (2) TC1501NP1620 : Vp = -1.6V to -2.0V
(3)TC1501NP1721 : Vp = -1.7V to -2.1V In addition, the customers may specify their requirements.
TYP
30
12
40
43
600
400
-1.7**
18
15
MAX
UNIT
dBm
dB
dBm
%
mA
mS
Volts
Volts
°C/W
TRANSCOM, INC., 90 Dasoong 7^th Road, Tainan Science-Based Industrial Park, Hsin-She Shiang, Tainan County, Taiwan, R.O.C.
Web-Site: www.transcominc.com.tw
Phone: [phone]
Fax: [phone]
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