TC1404N Datasheet, PDF (1/3 Pages) Transcom, Inc. – 0.5W High Linearity and High Efficiency GaAs Power FETs

TC1404N
REV2_20070502
0.5W High Linearity and High Efficiency GaAs Power FETs
FEATURES
! 0.5W Typical Power at 12 GHz
! Linear Power Gain: G_L = 11 dB Typical at 12 GHz
! High Linearity: IP3 = 37 dBm Typical at 12 GHz
! High Power Added Efficiency: Nominal PAE of 40 % at 12 GHz
! Non-Via Hole Source for Single-Bias Application
! Suitable for High Reliability Application
! Breakdown Voltage: BV_DGO ≥ 13.5 V
! Lg = 0.25 µm, Wg = 1.2 mm
! Tight Vp ranges control
! High RF input power handling capability
! 100 % DC Tested
DESCRIPTION
PHOTO ENLARGEMENT
The TC1404N is a GaAs Pseudomorphic High Electron Mobility Transistor (PHEMT) which has high linearity
and high Power Added Efficiency. The device is processed without via-holes for single-bias applications. The
short gate length enables the device to be used in circuits up to 20GHz. All devices are 100% DC tested to assure
consistent quality. Bond pads are gold plated for either thermo-compression or thermo-sonic wire bonding.
Backside gold plating is compatible with standard AuSn die-attach. Typical applications include commercial and
military high performance power amplifiers
ELECTRICAL SPECIFICATIONS (T_A=25 °C)
Symbol
Conditions
MIN TYP MAX UNIT
P_1dB Output Power at 1dB Gain Compression Point , f = 12GHz V_DS = 8 V, I_DS = 120 mA
26.5 27
dBm
G_L Linear Power Gain, f = 12GHz V_DS = 8 V, I_DS = 120 mA
11
dB
IP3 Intercept Point of the 3^rd-order Intermodulation, f = 12GHz V_DS =8V, I_DS = 120 mA, *P_SCL = 14 dBm
37
dBm
PAE Power Added Efficiency at 1dB Compression Power, f = 12GHz
40
%
I_DSS Saturated Drain-Source Current at V_DS = 2 V, V_GS = 0 V
g_m Transconductance at V_DS = 2 V, V_GS = 0 V
V_P Pinch-off Voltage at V_DS = 2 V, I_D = 2.4 mA
BV_DGO Drain-Gate Breakdown Voltage at I_DGO =0.6 mA
R_th Thermal Resistance
Note:
* P_SCL: Output Power of Single Carrier Level.
360
260
-1.7
13.5 15
30
mA
mS
Volts
Volts
°C/W
TRANSCOM, INC., 90 Dasoong 7^th Road, Tainan Science-Based Industrial Park, Hsin-She Shiang, Tainan County, Taiwan, R.O.C.
Web-Site: www.transcominc.com.tw
Phone: [phone]
Fax: [phone]
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