TC1202 Datasheet, PDF (1/4 Pages) List of Unclassifed Manufacturers – Super Low Noise GaAs FETs

TC1202
REV5_20070502
Super Low Noise GaAs FETs
FEATURES
! Low Noise Figure: NF = 0.5 dB Typical at 12 GHz
! High Associated Gain: Ga = 12 dB Typical at 12 GHz
! Lg = 0.25 µm, Wg = 300 µm
! All-Gold Metallization for High Reliability
! Tight Vp ranges control
! High RF input power handling capability
! 100 % DC Tested
PHOTO ENLARGEMENT
DESCRIPTION
The TC1202 is a GaAs Pseudomorphic High Electron Mobility Transistor (PHEMT) chip, which has very low
noise figure and high associated gain. The device can be used in circuits up to 30 GHz and suitable for low noise
application including a wide range of commercial and military applications. All devices are 100% DC tested to
assure consistent quality. All bond pads are gold plated for either thermo-compression or thermo-sonic wire
bonding.
ELECTRICAL SPECIFICATIONS (T_A=25 °C)
Symbol
NF
G_a
I_DSS
g_m
V_P
BV_DGO
R_th
Conditions
Noise Figure at V_DS = 4 V, I_DS = 25 mA_, f = 12GHz
Associated Gain at V_DS = 4 V, I_DS = 25 mA, f = 12GHz
Saturated Drain-Source Current at V_DS = 2 V, V_GS = 0 V
Transconductance at V_DS = 2 V, V_GS = 0 V
Pinch-off Voltage at V_DS = 2 V, I_D = 0.6 mA
Drain-Gate Breakdown Voltage at I_DGO =0.15 mA
Thermal Resistance
MIN
11
5
TYP
0.5
12
90
100
-1.0
8
120
MAX
0.7
UNIT
dB
dB
mA
mS
Volts
Volts
°C/W
Note: * For the tight control of the pinch-off voltage . TC1202’s are divided into 3 groups:
(1) TC1202P0710 : Vp = -0.7V to -1.0V (2) TC1202P0811 : Vp = -0.8V to -1.1V (3) TC1202P0912 : Vp = -0.9V to -1.2V
In addition, the customers may specify their requirements.
TRANSCOM, INC., 90 Dasoong 7^th Road, Tainan Science-Based Industrial Park, Hsin-She Shiang, Tainan County, Taiwan, R.O.C.
Web-Site: www.transcominc.com.tw
Phone: [phone]
Fax: [phone]
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