TC1101V Datasheet, PDF (1/2 Pages) Transcom, Inc. – Low Noise and Medium Power GaAs FETs

TC1101V
REV6_20070502
Low Noise and Medium Power GaAs FETs
FEATURES
Via holes for source grounding
Low Noise Figure: NF = 0.5 dB Typical at 12 GHz
High Associated Gain: Ga = 13 dB Typical at 12 GHz
High Dynamic Range: 1 dB Compression Power P_-1 = 18.5 dBm at 12 GHz
Breakdown Voltage: BV_DGO ≥ 9 V
Lg = 0.25 µm, Wg = 160 µm
All-Gold Metallization for High Reliability
Tight Vp ranges control
High RF input power handling capability
100 % DC Tested
PHOTO ENLARGEMENT
DESCRIPTION
The TC1101V is the same as TC1101 expect via holes in the source pads for reducing the grounding inductance. It
can be used in circuits up to 30 GHz and suitable for low noise and medium power amplifier application including
a wide range of commercial and military application. All devices are 100% DC tested to assure consistent quality.
All bond pads are gold plated for either thermo-compression or thermo-sonic wire bonding.
ELECTRICAL SPECIFICATIONS (T_A=25 °C)
Symbol
Conditions
MIN
TYP
MAX UNIT
NF Noise Figure at V_DS = 2 V, I_DS = 10 mA, f = 12GHz
0.5
0.7
dB
G_a Associated Gain at V_DS = 2 V, I_DS = 10 mA, f = 12GHz
11
13
dB
P_1dB Output Power at 1dB Gain Compression Point, f = 12GHz, V_DS = 6 V, I_DS = 25 mA
17.5
18.5
dBm
G_L Linear Power Gain, f = 12GHz, V_DS = 6 V, I_DS = 25 mA
14
15
dB
I_DSS Saturated Drain-Source Current at V_DS = 2 V, V_GS = 0 V
48
mA
g_m Transconductance at V_DS = 2 V, V_GS = 0 V
55
mS
V_P Pinch-off Voltage at V_DS = 2 V, I_D = 0.32 mA
-1.0*
Volts
BV_DGO Drain-Gate Breakdown Voltage at I_DGO =0.08 mA
9
12
Volts
R_th Thermal Resistance
180
°C/W
Note: * For the tight control of the pinch-off voltage . TC1101V’s are divided into 3 groups:
(1)TC1101VP0710 : Vp = -0.7V to -1.0V (2) TC1101VP0811 : Vp = -0.8V to -1.1V
(3)TC1101VP0912 : Vp = -0.9V to -1.2V
In addition, the customers may specify their requirements.
ABSOLUTE MAXIMUM RATINGS (T_A=25 °C) TYPICAL NOISE PARAMETERS (T_A=25 °C)
Symbol
V_DS
V_GS
I_DS
I_GS
P_in
P_T
T_CH
T_STG
Parameter
Drain-Source Voltage
Gate-Source Voltage
Drain Current
Gate Current
RF Input Power, CW
Continuous Dissipation
Channel Temperature
Storage Temperature
Rating
7.0 V
-3.0 V
I_DSS
160 µA
18 dBm
250 mW
175 °C
- 65 °C to +175 °C
V_DS = 2 V, I_DS = 10 mA
Frequency NF_opt
(GHz)
(dB)
G_A
(dB)
2
0.34 21.2
4
0.36 19.3
6
0.38 17.5
8
0.42 15.9
10
0.48 14.4
12
0.54 13.2
14
0.63 12.7
16
0.76 12.5
Γ_opt
MAG ANG
0.97
14
0.83
30
0.68
50
0.51
75
0.38
106
0.28
145
0.25 -168
0.31 -111
Rn/50
0.63
0.54
0.42
0.30
0.18
0.14
0.12
0.17
18
0.94 12.2
0.49
-45 0.36
TRANSCOM, INC., 90 Dasoong 7^th Road, Tainan Science-Based Industrial Park, Hsin-She Shiang, Tainan County, Taiwan, R.O.C.
Web-Site: www.transcominc.com.tw
Phone: [phone]
Fax: [phone]
1/2