TS4GSDHC6 Datasheet, PDF (3/24 Pages) Transcend Information. Inc. – 4~32GB High Capacity Secure Digital Card

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4~32GB High Capacity Secure Digital Card
Bus Operating Conditions
• General
Parameter
Peak voltage on all lines
All Inputs
Input Leakage Current
All Outputs
Output Leakage Current
• Power Supply Voltage
Parameter
Supply voltage
Output High Voltage
Output Low Voltage
Input High Voltage
Input Low Voltage
Power up time
Symbol Min.
Max.
Unit
-0.3
V_DD+0.3
V
-10
10
µA
-10
10
µA
Remark
Symbol Min.
Max.
V_DD
2.7
3.6
V_OH
0.75* V_DD
V_OL
0.125* V_DD
V_IH 0.625* V_DD V_DD+0.3
V_IL
V_SS-0.3 0.25* V_DD
250
Unit
V
V
V
V
V
ms
Remark
I_OH=-100uA@V_DD Min.
I_OL=100uA@V_DD Min.
From 0v to V_DD Min.
• Current Consumption
The current consumption is measured by averaging over 1 second.
‧ Before first command: Maximum 15 mA
‧ During initialization: Maximum 100 mA
‧ Operation in Default Mode: Maximum 100 mA
‧ Operation in High Speed Mode: Maximum 200 mA
‧ Operation with other functions: Maximum 500 mA.
• Bus Signal Line Load
The total capacitance C_L the CLK line of the SD Memory Card bus is the sum of the bus master capacitance C_HOST, the bus
capacitance C_BUS itself and the capacitance C_CARD of each card connected to this line:
C_L = C_HOST + C_BUS + Ν*C_CARD
Where N is the number of connected cards.
Parameter
Pull-up resistance
Bus signal line capacitance
Transcend Information Inc.
Symbol
R_CMD
R_DAT
C_L
Min.
10
3
Max.
100
40
Unit
Remark
kΩ To prevent bus floating
pF 1 card
C_HOST+C_BUS shall not exceed
30 pF