TS3001 Datasheet, PDF (3/10 Pages) Touchstone Semiconductor Inc – A 1V/1uA Easy-to-Use Resistor-Tuned Silicon Oscillator/Timer

TS3001
ELECTRICAL CHARACTERISTICS
VDD = 1V, VCNTRL = VDD, RSET = 4.32MΩ, RLOAD(FOUT) = Open Circuit, CLOAD(FOUT) = 0pF, CLOAD(PWM) = 0pF unless otherwise noted. Values are at
TA = 25°C unless otherwise noted. See Note 1.
PARAMETER
Supply Voltage
Supply Current
FOUT Period
FOUT Period Line
Regulation
FOUT Period
Temperature Coefficient
PWMOUT Duty Cycle
FOUT, PWMOUT
Rise Time
FOUT, PWMOUT
Fall Time
FOUT Jitter
RSET Pin Voltage
CNTRL Output Current
PWMOUT Enable
PWMOUT Disable
High Level Output
Voltage, FOUT and
PWMOUT
Low-level Output
Voltage, FOUT and
PWMOUT
SYMBOL
VDD
CONDITIONS
IDD
tFOUT
ΔtFOUT/V
VCNTRL = 0.15 x VDD
1V ≤ VDD ≤ 1.8V
-40°C ≤ TA ≤ 85°C
-40°C ≤ TA ≤ 85°C
-40°C ≤ TA ≤ 85°C
ΔtFOUT/ΔT
DC(PWMOUT)
tRISE
VCNTRL = 0.03 x VDD
VCNTRL = 0.15 x VDD
VCNTRL = 0.27 x VDD
See Note 2, CL = 15pF
tFALL
V(RSET)
ICNTRL
VPWM_EN
VPWM_DIS
See Note 2, CL = 15pF
See Note 3
(VDD - VCNTRL ), 0.9V < VDD < 1.8V
(VDD - VCNTRL ), 0.9V < VDD < 1.8V
-40°C ≤ TA ≤ 85°C
VDD - VOH
IOH = 1mA
VOL
IOL = 1mA
MIN
0.9
38.5
36.8
6
45
84
375
TYP
1
1
2.1
1.8
0.021
10.5
49.8
91
8.6
7.9
0.08
0.3
25
160
140
MAX
1.8
1.5
2.8
3.7
5.4
41.6
44.6
UNITS
V
µA
µs
%/V
%/°C
15
54.2
%
98
ns
ns
%
V
45
100
nA
mV
131
mV
mV
mV
Note 1: All devices are 100% production tested at TA = +25°C and are guaranteed by characterization for TA = TMIN to TMAX, as specified.
Note 2: Output rise and fall times are measured between the 10% and 90% of the VDD power-supply voltage levels. The specification is based
on lab bench characterization and is not tested in production.
Note 3: Timing jitter is the ratio of the peak-to-peak variation of the period to the mean of the period. The specification is based on lab bench
characterization and is not tested in production.
TS3001DS r1p0
Page 3
RTFDS