TPD7211F_13 Datasheet, PDF (8/13 Pages) Toshiba Semiconductor – Power MOSFET Gate Driver for half-bridge

TPD7211F
I_IH1 – V_IH1
50
Tj=25°C
40
30
20
10
0
0
1
2
3
4
5
IN1 ,IN2 Input voltage V_IH1[V]
I_IH2 – V_STBY
50
Tj=25°C
40
30
20
10
0
0
1
2
3
4
5
STBY Input voltage V_STBY[V]
0.20
0.16
0.12
0.08
0.04
0.00
0
V_DROP(OUT1) - V_DD
VSTBY=5V
VIN1=0V
IOUT1=-10mA
Tj=25°C
4
8
12
16
20
Supply voltage V_DD[V]
I_IH1 - T_j
50
VIN1=VIN2=5V
Per one input
40
30
20
10
0
-80
-40
0
40
80
120
160
Junction temperature T_j[°C]
I_IH2 - T_j
50
VSTBY=5V
40
30
20
10
0
-80
-40
0
40
80
120
160
Junction temperature T_j[°C]
V_DROP(OUT1) - T_j
0.20
VSTBY=5V
VIN1=0V
IOUT1=-10mA
0.16
VDD=12V
0.12
0.08
0.04
0.00
-80
-40
0
40
80
120
160
Junction temperature T_j[°C]
8
2013-11-01