TPCP8H02 Datasheet, PDF (7/8 Pages) Toshiba Semiconductor – TOSHIBA Multi-Chip Transistor Silicon NPN Epitaxial Type, Field Effect Transistor Silicon N Channel MOS Type

1000
100
Common source
VDS = 3 V
I_D − V_GS
10
Ta = 100°C
−25
1
25
0.1
0.01
0
1
2
3
Gate−source voltage V_GS (V)
V_th − Ta
2.0
Common source
ID = 0.1 mA
VDS = 3 V
1.6
1.2
0.8
0.4
0
−25
0
25
50
75 100 125 150
Ambient temperature Ta (°C)
TPCP8H02
R_{DS (ON)} − V_GS
8
Common source
ID = 10 mA
6
4
Ta = 100°C
2
−25
25
0
0
2
4
6
8
10
Gate−source voltage V_GS (V)
I_DR − V_DS
250
Common source
VGS = 0 V
Ta = 25°C
200
150
100
50
0
0 −0.2 −0.4 −0.6 −0.8 −1.0 −1.2 −1.4
Drain−source voltage V_DS (V)
7
2006-11-13