TLP701_07 Datasheet, PDF (7/8 Pages) Toshiba Semiconductor – IGBT/Power MOS FET gate drive

10
VCC=30V
8
I _{C C L} - Ta
6
4
2
0-40 _{-20 0 20 40 60 80 100}
Ambient Temperature Ta(°C)
I_OPL – Ta
1
IF=0mA,VCC=15V
(Note:9)
0.8
0.6
V6-5=10.0V
0.4
V6-5=2.0V
0.2
0-40 _{-20 0 20 40 60 80 100}
Ambient Temperature Ta(°C)
500
400
t p H L , t p L H - Ta
IF=5mA,VCC=30V
Rg=47Ω,Cg=3nF
300 _tpLH
200
tpHL
100
0-40 _{-20 0 20 40 60 80 100}
Ambient Temperature Ta(°C)
*: The above graphs show typical characteristics.
TLP701
10
I _F=5mA
VCC=30V
8
I _{C C H} - Ta
6
4
2
0-40 _{-20 0 20 40 60 80 100}
Ambient Temperature Ta(°C)
0
-0.2
-0.4
-0.6
I_OPH – Ta
IF=5mA,VCC=15V
(Note:9)
V8-6=4.0V
V8-6=10V
-0.8
-1-40 _{-20 0 20 40 60 80 100}
Ambient Temperature Ta(°C)
7
2007-10-01