TC74LVX4051FT Datasheet, PDF (7/11 Pages) Toshiba Semiconductor – TOSHIBA CMOS Digital Integrated Circuit Silicon Monolithic

TC74LVX4051,4052,4053FT
*Analog Switch Characteristics (GND = 0 V, Ta = 25°C)
Characteristics
Sine Wave Distortion
(T.H.D)
Frequency response
(switch ON)
Feed through attenuation
(switch OFF)
Crosstalk
(control input to signal
output)
Crosstalk
(between any switches)
Symbol
Test Condition
R_L = 10 kW, C_L = 50 pF,
f_IN = 1 kHz
V_IN = 2.0 V_p-p
V_IN = 4.0 V_p-p
V_IN = 6.0 V_p-p
4051
V_EE (V) V_CC (V)
0
3.0
0
4.5
-0.3
3.0
Typ.
0.100
0.030
0.020
150
4052
Adjust f_IN voltage to obtain 0dBm
at V_OS.
4053
Increase f_IN frequency until dB
f_max ^{meter reads -3dB.}
4051
4052
R_L = 50 W, C_L = 10 pF,
f_IN = 1 MHz, sine wave
4053
Figure 3
4051
4052
0
3.0
180
200
150
0
4.5
180
200
150
-3.0
3.0
180
4053
200
V_IN is centered at (V_CC - V_EE)/2.
Adjust input for 0dBm.
R_L = 600 W, C_L = 50 pF, f_IN = 1 MHz, sine wave
Figure 4
0
3.0
-45
0
4.5
-45
-3.0
3.0
-45
R_L = 50 W, C_L = 10 pF, f_IN = 1 MHz, sine wave
0
3.0
-60
0
4.5
-60
-3.0
3.0
-60
R_L = 600 W, C_L = 50 pF, f_IN = 1 MHz, square wave
0
3.0
90
(t_r = t_f = 6 ns)
0
4.5
150
Figure 5
-3.0
3.0
120
Adjust V_IN to obtain 0dBm at input.
R_L = 600 W, C_L = 50 pF, f_IN = 1 MHz, sine wave
Figure 6
0
3.0
-45
0
4.5
-45
-3.0
3.0
-45
Unit
%
MHz
dB
mV
dB
*: These characteristics are determined by design of devices.
Switch pin
Common pin
7
2001-11-12