TB2901HQ Datasheet, PDF (7/16 Pages) Toshiba Semiconductor – Maximum Power 47 W BTL × 4-ch Audio Power IC

TB2901HQ(O)
Electrical Characteristics
(unless otherwise specified, V_CC = 13.2 V, f = 1 kHz, R_L = 4 Ω, Ta = 25°C)
Characteristics
Quiescent current
Output power
Total harmonic distortion
Voltage gain
Voltage gain ratio
Output noise voltage
Ripple rejection ratio
Cross talk
Output offset voltage
Input resistance
Standby current
Standby control voltage
Mute control voltage
Mute attenuation
High-Side Switch
Symbol
Test
Circuit
Test Condition
Min
I_CCQ
⎯ V_IN = 0
⎯
P_OUT MAX (1) ⎯ V_CC = 14.4 V, max POWER
⎯
P_OUT MAX (2) ⎯ V_CC = 13.7 V, max POWER
⎯
V_CC = 14.4 V, RL =2Ω
P_OUT MAX (3) ⎯
⎯
max POWER
P_OUT (1)
P_OUT (2)
THD
G_V
∆G_V
V_NO (1)
V_NO (2)
R.R.
C.T.
V_OFFSET
R_IN
I_SB
V_SB H
V_SB L
V_M H
V_M L
⎯ V_CC = 14.4 V, THD = 10%
⎯
⎯ THD = 10%
23
⎯ P_OUT = 5 W
⎯ V_OUT = 0.775 Vrms
⎯ V_OUT = 0.775 Vrms
⎯ Rg = 0 Ω, DIN45405
⎯
24
−1.0
⎯
⎯ Rg = 0 Ω, BW = 20 Hz~20 kHz ⎯
⎯
f_rip = 100 Hz, R_g = 620 Ω
V_rip = 0.775 Vrms
⎯
R_g = 620 Ω
V_OUT = 0.775 Vrms
⎯
⎯
50
⎯
−150
⎯
⎯
⎯
⎯ Standby condition
⎯
⎯ POWER: ON
3.5
⎯ POWER: OFF
0
⎯ MUTE: OFF
3.0
⎯ MUTE: ON, R₁ = 47 kΩ
0
ATT M
⎯
MUTE: ON
V_OUT = 7.75 Vrms→Mute: OFF
80
Typ.
200
47
43
80
29
25
0.015
26
0
100
90
60
70
0
90
2
⎯
⎯
⎯
⎯
90
Max
400
⎯
⎯
⎯
⎯
⎯
0.15
28
1.0
⎯
200
⎯
⎯
150
⎯
10
6.0
1.5
6.0
0.5
⎯
Unit
mA
%
dB
dB
µVrms
dB
dB
mV
kΩ
µA
V
V
dB
Output current
I_O
Difference voltage between V_CC and
output
∆V_o
⎯
⎯ I_O = 400 mA, +B = 9.6 V
400 ⎯
⎯
mA
⎯ 0.25 0.6
V
7
2004-10-15