MIG50Q6CSB1X Datasheet, PDF (7/11 Pages) Toshiba Semiconductor – TOSHIBA Intelligent Power Module Silicon N Channel IGBT

MIG50Q6CSB1X
4. Recommended conditions for application
Characteristic
Supply voltage
Control supply voltage
Carrier frequency
Dead time
Symbol
Test Condition
Min Typ. Max Unit
V_CC
V_D
fc
tdead
P-N Power terminal
¾
600 800
V
V_D-GND Signal terminal
PWM Control
13.5 15 16.5 V
¾
¾
20 kHz
Switching time test circuit
(see page.6)
(Note 2)
3
¾
¾
ms
Note 2: The table lists Dead time requirements for the module input, excluding photocoupler delays. When
specifying dead time requirements for the photocoupler input, please add photocoupler delays to the dead
time given above.
Dead Time Timing Chart
15 V
V_IN Waveform
0
15 V
V_IN Waveform
0
t_dead
t_dead
7
2003-02-19