TPCP8202 Datasheet, PDF (6/7 Pages) Toshiba Semiconductor – TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (U-MOSIV)

1000
Single pulse
100
r_th – t_w
TPCP8202
(4)
(3)
(2)
(1)
10
1
0.001
0.01
Device mounted on a glass-epoxy board (a) (Note 2a)
(1) Single-device operation
(Note 3a)
(2) Single-device value at dual operation (Note 3b)
Device mounted on a glass-epoxy board (b) (Note 2b)
(3) Single-device operation
(Note 3a)
(4) Single-device value at dual operation (Note 3b)
0.1
1
10
100
1000
Pulse width t_w (s)
Safe operating area
100
ID max (pulse)*
10
1 ms*
10 ms*
1
*: Single nonrepetitive pulse
Ta = 25°C
Curves must be derated
linearly with increase in
temperature.
VDSS max
0.1
0.1
1
10
100
Drain−source voltage V_DS (V)
6
2007-01-16