TPCP8102 Datasheet, PDF (6/7 Pages) Toshiba Semiconductor – TOSHIBA Field Effect Transistor Silicon P-Channel MOS Type (U-MOS Ⅳ)

TPCP8102
r_th(j−c) − t_w
1000
Device mounted on a glass-epoxy board (b) (Note 2b)
Device mounted on a glass-epoxy board (a) (Note 2a)
Single pulse
100
10
1
0.1
0.001
0.01
0.1
1
10
Pulse width t_w (s)
(2)
(1)
100
1000
Safe operating area
100
ID max (pulse) *
10
10 ms *
1 ms *
1
*: Single nonrepetitive pulse
Ta = 25°C
Curves must be derated
linearly with increase in
temperature.
0.1
0.1
1
VDSS max
10
Drain−source voltage V_DS (V)
10
6
2006-11-17