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TPCF8402_0912 Datasheet, PDF (6/11 Pages) Toshiba Semiconductor – Portable Equipment Applications Motor Drive Applications DC-DC Converter Applications
P-channel
150
RDS (ON) – Ta
120
90
60
30
0
−80
ID = -0.8A, -1.6A, -3.2A
VGS = -4.5V
VGS = -10V
ID = -0.8A, -1.6A, -3.2A
Common source
Pulse test
−40
0
40
80
120
160
Ambient temperature Ta (°C)
TPCF8402
IDR – VDS
10
-10
5
-3.0 -1.0
3
-5.0
VGS = 0 V
1
0.5
0.3
Common source
Ta = 25°C
Pulse test
0.1
0
0.3
0.6
0.9
1.2
1.5
Drain-source voltage VDS (V)
Capacitance – VDS
1000
Ciss
100
Coss
Common source
VGS = 0 V
f = 1 MHz
Ta = 25°C
10
-0.1
-1
Crss
-3 -5 -10
-30 -50 -100
Drain-source voltage VDS (V)
Vth – Ta
-2.0
-1.5
-1.0
Common source
-0.5 VDS = -10 V
ID = -1mA
Pulse test
0
−80
−40
0
40
80
120
160
Ambient temperature Ta (°C)
2.0
1.6
(1)
1.2
(2)
0.8
(3)
PD – Ta
Device mounted on a glass-epoxy board (a) (Note 2a)
(1)Single-device operation (Note 3a)
(2)Single-device value at dual operation (Note 3b)
Device mounted on a glass-epoxy board (b) (Note 2b)
(3)Single-device operation (Note 3a)
(4)Single-device value at dual operation (Note 3b)
t=5s
0.4
(4)
0
0
40
80
120
160
200
Ambient temperature Ta (°C)
Dynamic input/output
characteristics
-30
-15
-25 VDS
VDD = -24V
-20
-15
-12
VDD = -6V
VGS
-10
-10
-6
-5
0
0
4
-12
-24
8
Common
source
ID = -3.2 A
Ta = 25°C
Pulse test
12
-5
0
16
Total gate charge Qg (nC)
6
2009-12-10