TPCA8A04-H Datasheet, PDF (6/8 Pages) Toshiba Semiconductor – TOSHIBA Field Effect Transistor with Built-in Schottky Barrier Diode

TPCA8A04-H
1000
100
r_th – t_w
(1) Device mounted on a glass-epoxy board (a) (Note 2a)
(2) Device mounted on a glass-epoxy board (b) (Note 2b)
(3) Tc = 25℃
10
1
0.1
0.01
0.0001
0.001
0.01
0.1
1
10
Pulse width t_w (s)
(2)
(1)
(3)
Single - pulse
100
1000
3.0
(1)
2.5
2.0
P_D – Ta
(1) Device mounted on a glass-epoxy
board (a) (Note 2a)
(2) Device mounted on a glass-epoxy
board (b) (Note 2b)
t = 10s
1.5 ₍₂₎
1.0
0.5
0
0
40
80
120
160
Ambient temperature Ta (°C)
P_D – Tc
50
40
30
20
10
0
0
40
80
120
160
Case temperature Tc (°C)
Safe operating area
1000
ID max (Pulse) *
100
t =10 ms *
10
t =1 ms *
Single-pulse
1 _{Ta = 25°C}
Curves must be derated
linearly with increase in
temperature.
0.1
VDSS max
0.1
1
10
100
Drain-source voltage V_DS (V)
6
2010-01-19