TB6598FN Datasheet, PDF (6/17 Pages) Toshiba Semiconductor – Dual Full-Bridge Driver for Stepping Motors

TB6598FN/FNG
Electrical Characteristics (unless otherwise specified, V_CC = 3 V, V_M = 12 V, Ta = 25°C)
Characteristics
Symbol
Test
Circuit
Test Condition
Supply current
I_CC1
I_CC2
I_CC3
I_M1
I_M2
I_M3
1 1ch ON
EN1 = 0.8 V, EN2 = 2.0 V
1 2ch ON
EN1 = EN2 = 2.0 V
1 Standby mode
EN1 = EN2 = 0.5 V
1 1ch ON, Output open
EN1 = 0.8 V, EN2 = 2.0 V
1 2ch ON, Output open
EN1 = EN2 = 2.0 V
1 Standby mode
EN1 = EN2 = 0.5 V
Input voltage
Control circuit
Hysteresis
voltage
V_INH
V_INL1
V_INL2
V_{IN (HIS)}
2
2
2 Standby mode
⎯ (Design target value)
I_INH
Input current
I_INL
Output saturating voltage
V_{sat (U + L)}
Output constant-current
detection level
V_RF
2 VIN = 3 V
2 VIN = GND
I_O = 0.2 A
3
I_O = 0.6 A
4
R_RF = 0.1 Ω, V_ref = 0.6 V
Reference voltage
Reference voltage current
capacity
V_ref
5 No load
I_ref
5
Source (∆V_ref = 50 mV)
Input current at winding current
setting pin
I_{IN (limit)}
6
V_limit = GND
Output leakage current
Diode forward voltage
Oscillation frequency
Capacitor charge current
Capacitor discharge current
Thermal shutdown circuit
operating temperature
Thermal shutdown hysterisis
I_{L (U)}
I_{L (L)}
V_{F (U)}
V_{F (L)}
f osc
I_C1
I_C2
T_SD
∆T_SD
7
V_M = 15 V
7
8 I_O = 0.6 A
9 I_O = 0.6 A
10 C_osc = 220 pF
11 V_osc = 0 V
11 V_osc = 2 V
⎯
(Design target value)
⎯
Min Typ. Max Unit
⎯ 1.4
3 mA
⎯ 1.4
3 mA
⎯
7
15 µA
⎯ 1.9 3.0
mA
⎯ 1.9 3.0
⎯⎯
1 µA
2
⎯
V_CC +
0.2
−0.2 ⎯ 0.8
V
−0.2 ⎯ 0.5
⎯ 0.2 ⎯
5
15
30 µA
⎯⎯
1 µA
⎯ 0.3 0.4
V
⎯ 0.9 1.2
0.565 0.6 0.635 V
0.57 0.6 0.63 V
⎯ ⎯ 100 µA
⎯⎯
1 µA
⎯⎯
⎯⎯
1
µA
1
⎯
1
1.2
V
⎯
1
1.2
430 530 630 kHz
⎯ 115 ⎯ µA
⎯ 115 ⎯ µA
⎯ 170 ⎯ °C
⎯ 20 ⎯ °C
6
2005-01-19