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TB62726AF Datasheet, PDF (6/16 Pages) Toshiba Semiconductor – TOSHIBA Bi-CMOS INTEGRATED CIRCUIT SILICON MONOLITHIC
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TOSHIBA
TB62726AN, TB62726AF
Electrical characteristics ( VDD=3V to 5.5V, Topr=25degree unless otherwise noted.)
Characteristics
Symbol
Condition
Min
Typ
Supply voltage
Output current
Output current
error between bits
Output leakage
Current Input voltage
VDD
IOUT1
IOUT2
IOUT3
IOUT4
dIOUT1
dIOUT2
IOZ
Normal operation
VOUT=0.4V,VDD=3.3V
REXT=
VOUT=0.4V,VDD=5V
490 ohm
VOUT=0.7V,VDD=3.3V
REXT=
VOUT=0.7V,VDD=5V
250 ohm
VOUT=0.4V,
REXT=490 ohm
VOUT=0.4V,
All output ON
REXT=250 ohm
VOUT=15V
3.0
31.96
31.59
63.63
62.75
-
-
-
36.20
35.90
72.30
71.30
+/-1
-
Input voltage
VIN
-
0.7VDD
-
-
GND
-
SOUT terminal
VOL
IOL=+1 mA, Vdd=3.3V
IOL=+1 mA, Vdd=5V
-
-
-
-
Voltage
VOH
IOH=-1 mA, Vdd=3.3V
IOH=+1 mA,Vdd=5V
.3
-
4.7
-
Output current
supply voltage
%/VDD When VDD is changed 3V to 5.5V
-
-1
regulation
Pull up resistor
Pull down resistor
R(UP)
R(DOWN)
ENABLE terminal
LATCH terminal
. 115
230
IDD(OFF)1
REXT=Open, VOUT=15V
-
0.1
IDD(OFF)2 REXT=490ohm
All output OFF,
.1
3.5
IDD(OFF)3 REXT=250ohm
VOUT=15V
.4
6
Supply current
IDD(ON)1
REXT=490ohm
All output ON,
VOUT=0.7V
Ta= -40degree,
-
9
-
-
Same as the avobe.
All output ON,
IDD(ON)2
REXT=250ohm
VOUT=0.7V
Ta= -40 degree,
-
18
-
-
Same as the avobe.
Max Unit
5.5
V
40.54
40.20
mA
80.97
79.95
+/-4
%
1
µA
VDD
V
0.3VDD
0.3
0.3
V
-
-
-5
%/V
460
0.5
5
9
15
Ohm
20
25
40
TB62726AN, TB62726AF (Ver.5) 2002, Nov. 20th page 6/16
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