TPCS8303_07 Datasheet, PDF (5/7 Pages) Toshiba Semiconductor – Lithium Ion Battery Applications Notebook PC Applications Portable Machines and Tools

R_{DS (ON)} – Ta
60
Common source
50 Pulse test
ID = −5 A
40
30 ^{VGS = −2 V}
−2.5
−1.3
20 ^{VGS = −2.5 V}
10 _{VGS = −4.5 V}
ID = −5 A, −2.5 A, −1.3 A
0
−80
−40
0
40
80
120
160
Ambient temperature Ta (°C)
TPCS8303
I_DR – V_DS
−100
−5
−10 ^{−10 V}
−3
−1
VGS = 0 V
−1
−0.1
0
Common source
Ta = 25°C
Pulse test
0.2
0.4
0.6
0.8
1.0
1.2
Drain−source voltage V_DS (V)
10000
3000
Capacitance – V_DS
Ciss
1000
300
100
30
10
−0.1
Coss
Crss
Common source
Ta = 25°C
VGS = 0 V
f = 1 MHz
−0.3
−1
−3
−10 −30
−100
Drain−source voltage V_DS (V)
1.25
(1)
1.0
(2)
0.75
(3)
0.5
(4)
0.25
P_D – Ta
Device mounted on a glass-epoxy
board (a)
(Note 2a)
(1) Single-device operation (Note 3a)
(2) Single-device value at dual
operation
(Note 3b)
Device mounted on a glass-epoxy
board (b)
(Note 2b)
(3) Single-device operation
(Note 3a)
(4) Single-device value at dual
operation
(Note 3b)
t = 10 s
0
0
40
80
120
160
200
Ambient temperature Ta (°C)
V_th – Ta
−1.2
−1.0
−0.8
−0.6
−0.4
Common source
VDS = −10 V
−0.2 _{ID = −200 μA}
Pulse test
0
−80
−40
0
40
80
120
160
Ambient temperature Ta (°C)
Dynamic input/output
characteristics
−20
−10
Common source
VDD = −16 V
ID = −5 A
Ta = 25°C, Pulse test
−15
−7.5
−10
−8
VDS
−4
−8
−5
VDD = −16 V
−5 _−4
−2.5
VGS
0
0
0
10
20
30
40
Total gate charge Q_g (nC)
5
2006-11-16