TPCS8008-H Datasheet, PDF (5/7 Pages) Toshiba Semiconductor – High-Speed Switching Applications Switching Regulator Applications DC/DC Converter Applications

R_{DS (ON)} − Ta
1.6
Common source
V_GS = 10 V
Pulse test
1.2
0.8
ID = 1.7 A
0.8
0.4
0.4
0
−80 −40
0
40
80
120
160
Ambient temperature Ta (°C)
TPCS8008-H
I_DR − V_DS
10
Common source
Ta = 25°C
Pulse test
1
10
5
3
0.1
0
1
VGS = 0 V
−0.2
−0.4
−0.6
−0.8
−1.0
Drain-source voltage V_DS (V)
Capacitance – V_DS
1000
Ciss
100
Coss
10
Common source
V_GS = 0 V
f = 1 MHz
Ta = 25°C
1
0.1
1
Crss
10
100
Drain-source voltage V_DS (V)
V_th − Ta
4
Common source
V_DS = 10 V
I_D = 1mA
Pulse test
3
2
1
0
−80
−40
0
40
80
120
160
Ambient temperature Ta (°C)
2.0
1.6 ₍₁₎
1.2
P_D – Ta
(1) Device mounted on a
glass-epoxy board (a)
(Note 2a)
(2) Device mounted on a
glass-epoxy board (b)
(Note 2b)
ｔ＝10s
0.8
(2)
0.4
0
0
40
80
120
160
200
Ambient temperature Ta (°C)
Dynamic input/output
characteristics
300 _{Common source}
24
I_D = 1.7 A
Ta = 25°C
Pulse test
VDS
200
16
100
50
VDS = 200 V
100
8
VGS
0
0
0
5
10
15
Total gate charge Q_g (nC)
5
2006-11-21