TPCF8301_07 Datasheet, PDF (5/7 Pages) Toshiba Semiconductor – TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOS III)

R_{DS (ON)} – Ta
300
Common source
ID = −1.4 A
Pulse test
250
VGS = −1.8 V
200
150
ID = −2.7 A
−0.7 A
ID = −1.4 A
−0.7 A
100
−2.5 V
50
−4.5 V
ID = −0.7, −1.4, −2.7 A
0
−80
−40
0
40
80
120
160
Ambient temperature Ta (°C)
TPCF8301
−100
Common source
Ta = 25°C
Pulse test
I_DR – V_DS
−4.5
−10
−2.5
−1.8
−1
VGS = 0 V
−1
0
0.4
0.8
1.2
1.6
2.0
Drain-source voltage V_DS (V)
Capacitance – V_DS
10000
Common source
VGS = 0 V
f = 1 MHz
Ta = 25°C
1000
Ciss
100
Coss
Crss
10
−0.1
−1
−10
Drain-source voltage V_DS (V)
−100
−2.0
Common source
VDS = −10 V
ID = −200 μA
Pulse test
−1.5
V_th – Ta
−1.0
−0.5
−0.0
−80
−40
0
40
80
120
160
Ambient temperature Ta (°C)
2
t=5s
1.6
(1)
1.2 (2)
0.8
(3)
0.4 (4)
P_D – Ta
Device mounted on a glass-epoxy
board (a) (Note 2a)
(1) Single-device operation (Note 3a)
(2) Single-device value at dual
operation (Note 3b)
Device mounted on a glass-epoxy
board (b) (Note 2b)
(3) Single-device operation (Note 3a)
(4) Single-device value at dual
operation (Note 3b)
0
0
40
80
120
160
Ambient temperature Ta (°C)
Dynamic input/output characteristics
−20
−10
−16
−12
−8
−4
0
0
VDS
−4 V
−8 V
−8
VDD = −16 V −6
VGS
−4
Common source
ID = −2.7 A
Ta = 25°C
−2
Pulse test
0
−2
−4
−6
−8
−10
Total gate charge Q_g (nC)
5
2006-11-16