TPCA8028-H Datasheet, PDF (5/7 Pages) Toshiba Semiconductor – Field Effect Transistor Silicon N-Channel MOS Type (U-MOSⅥ-H)

R_{DS (ON)} – Ta
5
Common source
Pulse test
4
ID = 12.5A,25A,50A
3
2
VGS = 4.5 V
ID = 12.5A,25A,50A
1
VGS = 10 V
0
−80
−40
0
40
80
120
160
Ambient temperature Ta (°C)
TPCA8028-H
100
10
I_DR – V_DS
4.5
3
10
1
VGS = 0 V
Common source
Ta = 25°C
Pulse test
1
0
−0.2
−0.4
−0.6
−0.8
−1.0
Drain-source voltage V_DS (V)
10000
1000
Capacitance – V_DS
Ciss
Coss
Crss
100
Common source
VGS = 0 V
f = 1 MHz
Ta = 25°C
10
0.1
1
10
100
Drain-source voltage V_DS (V)
V_th – Ta
2.5
2.0
1.5
1.0
Common source
0.5 _{VDS = 10 V}
ID = 1 mA
Pulse test
0
−80
−40
0
40
80
120
160
Ambient temperature Ta (°C)
Dynamic input/output
characteristics
50
20
Common source
ID = 50 A
40 ^{Ta = 25°C}
16
Pulse test
30
VDS
20
10
12
VDD = 6 V
8
24 ¹²
4
0
0
0
20
40
60
80
100
Total gate charge Q_g (nC)
5
2008-01-22