TPC8124 Datasheet, PDF (5/7 Pages) Toshiba Semiconductor – Field Effect Transistor Silicon P Channel MOS Type (U-MOSⅥ)

R_{DS (ON)} – Ta
20
Common source
Pulse test
15
10
VGS = −4 .5V
5
VGS = −10 V
ID = −3, −6, −12 A
ID = −3, −6, −12 A
0
−80
−40
0
40
80
120
160
Ambient temperature Ta (°C)
TPC8124
−100
−10
−10
I_DR – V_DS
−4.5
−3
−1
VGS = 0 V
−1
−0.1
0
Common source
Ta = 25°C
Pulse test
0.2
0.4
0.6
0.8
1
1.2
Drain−source voltage V_DS (V)
10000
Capacitance – V_DS
Ciss
1000
Common source
VGS = 0 V
f = 1 MHz
Ta = 25°C
100
−0.1
−1
Coss
Crss
−10
−100
Drain−source voltage V_DS (V)
V_th – Ta
−2
−1.6
−1.2
−0.8
Common source
−0.4 _{VDS = −10 V}
ID = −0.5mA
Pulse test
0
−80
−40
0
40
80
120
160
Ambient temperature Ta (°C)
2
(1)
1.6
1.2
(2)
0.8
P_D – Ta
(1)Device mounted on a glass-epoxy
board(a) (Note 2a)
(2)Device mounted on a glass-epoxy
board(b) (Note 2b)
t = 10 s
0.4
0
0
40
80
120
160
Ambient temperature Ta (°C)
Dynamic input/output
characteristics
−40
−20
VDD = −32 V
−30
VDS
−20
−16
−10 _−8
VGS
−15
−8
VDD = −32 V _−10
−16
Common source
ID = −12 A
Ta = 25°C
−5
Pulse test
0
0
0
40
80
120
160
Total gate charge Q_g (nC)
5
2009-11-16