TPC8036-H Datasheet, PDF (5/7 Pages) Toshiba Semiconductor – Field Effect Transistor Silicon N-Channel MOS Type (U-MOSⅥ-H)

R_{DS (ON)} – Ta
8
Common source
Pulse test
18 A
ID = 4.5, 9 A
6
4
VGS = 4.5 V
2
VGS = 10 V
ID = 4.5, 9, 18 A
0
−80
−40
0
40
80
120
160
Ambient temperature Ta (°C)
TPC8036-H
100
10
I_DR – V_DS
4.5
3
1
10
VGS = 0 V
Common source
Ta = 25°C
Pulse test
1
0
−0.2
−0.4
−0.6
−0.8
−1.0
Drain-source voltage V_DS (V)
10000
Capacitance – V_DS
Ciss
1000
Coss
100
Common source
VGS = 0 V
f = 1 MHz
Ta = 25°C
10
0.1
1
Crss
10
100
Drain-source voltage V_DS (V)
V_th – Ta
2.5
2
1.5
1
0.5 ^{Common source}
VDS = 10 V
ID = 0.5 mA
Pulse test
0
−80
−40
0
40
80
120
160
Ambient temperature Ta (°C)
2
(1)
1.5
(2)
1.0
P_D – Ta
(1)Device mounted on a glass-epoxy
board(a) (Note 2a)
(2)Device mounted on a glass-epoxy
board(b) (Note 2b)
t=10 s
0.5
0
0
40
80
120
160
Ambient temperature Ta (°C)
Dynamic input/output
characteristics
40
16
Common source
ID = 18 A
Ta = 25°C
Pulse test
30
12
20 ^VDS
10
VDD = 6 V
8
24 V ^{12 V}
4
0
0
0
10
20
30
40
50
60
Total gate charge Q_g (nC)
5
2008-09-16