TC7WG125FU Datasheet, PDF (5/9 Pages) Toshiba Semiconductor – CMOS Digital Integrated Circuit Silicon Monolithic Dual Bus Buffer with 3-STATE Output

TC7WG125FU/FK
Characteristics
Output disable time
Input capacitance
Power dissipation capacitance
Symbol Test Condition
C_L = 10 pF,
R_L = 100 kΩ
V_CC (V)
0.9
1.1~1.3
Ta = 25°C
Ta = −40~85°C
Unit
Min Typ. Max Min Max
⎯ 168.6 ⎯
⎯
⎯
⎯
9.5 18.4 1.0 25.2
C_L = 10 pF,
R_L = 5 kΩ
1.4~1.6 ⎯
1.65~ 1.95 ⎯
2.3~2.7 ⎯
7.5 9.5
7.1 8.7
6.8 7.9
1.0 10.6
1.0 9.6
1.0 8.8
3.0~3.6
⎯
6.5 7.5 1.0 8.4
C_L = 15 pF,
R_L = 100 kΩ
0.9
⎯ 201.8 ⎯
⎯
⎯
1.1~1.3 ⎯ 10.5 19.8 1.0 27.6
t_pLZ
t_pHZ
C_L = 15 pF,
R_L = 5 kΩ
1.4~1.6 ⎯
1.65~ 1.95 ⎯
9.0 10.4 1.0 12.3
ns
8.5 9.7 1.0 10.6
2.3~2.7
⎯
7.9 8.8 1.0 10.3
3.0~3.6
⎯
7.6 8.3 1.0 9.5
C_L = 30 pF,
R_L = 100 kΩ
0.9
1.1~1.3
⎯ 251.5 ⎯
⎯
⎯
⎯ 14.1 23.8 1.0 31.9
C_L = 30 pF,
R_L = 5 kΩ
1.4~1.6 ⎯
1.65~ 1.95 ⎯
2.3~2.7 ⎯
13.5 14.5
12.7 14.3
12.2 14.1
1.0 16.0
1.0 15.0
1.0 14.7
3.0~3.6 ⎯ 11.9 13.8 1.0 14.4
C_IN
C_PD
⎯
3.6
⎯
3
⎯
⎯
⎯
pF
(Note 13) 0.9 ~ 3.6 ⎯
10
⎯
⎯
⎯
pF
Note 13: C_PD is defined as the value of the internal equivalent capacitance which is calculated from the operating
current consumption without load.
Average operating current can be obtained by the equation:
I_{CC (opr.)} = C_PDï½¥V_CCï½¥f_IN + I_CC/2
AC Characteristics Measurement Circuit
Output
Open
V_CC x 2
GND
Measure
Characteristics
t_pLH, t_pHL
t_pLZ, t_pZL
t_pHZ, t_pZH
Switch
Open
V_CC x 2
GND
Figure1 t_pLH, t_pHL
5
2007-11-01