TC7SA08F_07 Datasheet, PDF (5/9 Pages) Toshiba Semiconductor – 2-Input AND Gate

TC7SA08F/FU
Dynamic Switching Characteristics (Ta = 25°C, input: t_r = t_f = 2.0 ns, C_L = 30 pF)
Characteristics
Symbol
Test Condition
Quiet output maximum dynamic V_OL
V_OLP
Quiet output minimum dynamic V_OL
V_OLV
Quiet output minimum dynamic V_OH
V_OHV
Note 11: Parameter guaranteed by design.
V_IN = 1.8 V, V_IL = 0 V
V_IN = 2.5 V, V_IL = 0 V
V_IN = 3.3 V, V_IL = 0 V
V_IN = 1.8 V, V_IL = 0 V
V_IN = 2.5 V, V_IL = 0 V
V_IN = 3.3 V, V_IL = 0 V
V_IN = 1.8 V, V_IL = 0 V
V_IN = 2.5 V, V_IL = 0 V
V_IN = 3.3 V, V_IL = 0 V
Typ. Unit
V_CC (V)
(Note 11) 1.8 0.25
(Note 11) 2.5
0.6
ns
(Note 11) 3.3
0.8
(Note 11) 1.8 −0.25
(Note 11) 2.5 −0.6 ns
(Note 11) 3.3 −0.8
(Note 11) 1.8
1.5
(Note 11) 2.5
1.9
ns
(Note 11) 3.3
2.2
Capacitive Characteristics (Ta = 25°C)
Characteristics
Input capacitance
Power dissipation capacitance
Symbol
Test Condition
C_IN
⎯
C_PD f_IN = 10 MHz
V_CC (V)
Typ. Unit
1.8, 2.5, 3.3
6
pF
(Note 12) 1.8, 2.5, 3.3 20
pF
Note 12: C_PD is defined as the value of the internal equivalent capacitance which is calculated from the operating
current consumption without load.
Average operating current can be obtained by the equation.
I_{CC (opr)} = C_PDï½¥V_CCï½¥f_IN + I_CC
5
2007-11-01