TC7PA04FU Datasheet, PDF (5/8 Pages) Toshiba Semiconductor – TOSHIBA CMOS Digital Integrated Circuit Silicon Monolithic

TC7PA04FU
Dynamic Switching Characteristics (Ta = 25°C, input t_r = t_f = 2.0 ns, C_L = 30 pF)
Characteristics
Symbol
Test Condition
Quiet Output Maximum Dynamic
V_OL
Quiet Output Minimum Dynamic
V_OL
Quiet Output Minimum Dynamic
V_OH
V_OLP
V_OLV
V_OLP
V_IN = 1.8 V, V_IL = 0 V
V_IN = 2.5 V, V_IL = 0 V
V_IN = 3.3 V, V_IL = 0 V
V_IN = 1.8 V, V_IL = 0 V
V_IN = 2.5 V, V_IL = 0 V
V_IN = 3.3 V, V_IL = 0 V
V_IN = 1.8 V, V_IL = 0 V
V_IN = 2.5 V, V_IL = 0 V
V_IN = 3.3 V, V_IL = 0 V
Note 11: Characteristics guaranteed by design.
TYP. Unit
V_CC (V)
(Note 11) 1.8 0.25
(Note 11) 2.5
0.6
ns
(Note 11) 3.3
0.8
(Note 11) 1.8 -0.25
(Note 11) 2.5 -0.6 ns
(Note 11) 3.3 -0.8
(Note 11) 1.8
1.5
(Note 11) 2.5
1.9
ns
(Note 11) 3.3
2.2
Capacitive Characteristics (Ta = 25°C)
Characteristics
Input Capacitance
Power Dissipation Capacitance
Symbol
Test Condition
C_IN
¾
C_PD f_IN = 10 MHz
V_CC (V)
TYP. Unit
1.8, 2.5, 3.3
5
pF
(Note 12) 1.8, 2.5, 3.3 18
pF
Note 12: C_PD is defined as the value of the internal equivalent capacitance which is calculated from the operating
current consumption without load.
Average operating current can be obtained by the equation:
I_{CC (opr.)} = C_PDï½¥V_CCï½¥f_IN + I_CC/2
5
2002-08-21