SSM5G09TU Datasheet, PDF (5/10 Pages) Toshiba Semiconductor – DC-DC Converter

MOS Electrical Characteristics Graph
SSM5G09TU
I_D - V_DS (MOSFET)
-4
-4.0V
-3.5
-2.5V
Common Source
Ta=25℃
-3
-2.0V
-2.5
V_GS = - 1 .8 V
-2
-1.5
-1
-0.5
I_D - V_GS (MOSFET)
- 10000
- 1000
Common Source
V_DS = - 3 V
-100
-10
-1
Ta=85℃
25℃
-25℃
- 0.1
0
- 0.0 1
0
-0.5
-1
-1.5
-2
0
-0.5
-1
-1.5
-2
-2.5
Drain-Source voltage V_DS (V)
Gate-Source voltage V_GS (V)
R_DS(ON) - I_D (MOSFET)
300
Common Source
Ta=25℃
200
-2.5V
100
V_GS=-4.0V
0
0
-0.5
-1
-1.5
-2
-2.5
-3
-3.5
-4
Drain current I_D (A)
0.5
0.4
0.3
0.2
0.1
0
0
R_DS(ON) - V_GS (MOSFET)
Common Source
I_D=-0.6A
25℃
-25℃
Ta=85℃
-2
-4
-6
-8
Gate-Source Voltage V_GS(V)
R_DS(ON) - Ta (MOSFET)
300
Common Source
I_D= - 0 .6 A
200
-2.5V
100
-4.0V
0
-25
0
25
50
75
100
Ambient temperture Ta (℃)
-2
-1.8
-1.6
-1.4
-1.2
-1
-0.8
-0.6
-0.4
-0.2
0
-25
Vth - Ta (MOSFET)
Common Source
I_D=-0.1mA
V_DS = - 3 V
0
25
50
75
100
Ambient temperture Ta (℃)
5
2014-03-01