SSM5G04TU Datasheet, PDF (5/10 Pages) Toshiba Semiconductor – DC-DC Converter

MOSFET Electrical Characteristics Graph
−2
−10
I_D – V_DS (MOSFET)
−4
Common Source
−2.7
Ta = 25°C
−1.5
−2.1
−1
−1.8
−0.5
VGS = −1.5 V
0
0
−0.5
−1
−1.5
−2
Drain-Source voltage V_DS (V)
SSM5G04TU
I_D – V_GS (MOSFET)
−10000
Common Source
VDS = −3 V
−1000
−100
−10
−1
−0.1
Ta = 85°C
25°C
−25°C
−0.01
0
−0.5
−1
−1.5
−2
−2.5
Gate-Source voltage V_GS (V)
R_{DS (ON)} – I_D (MOSFET)
0.5
Common Source
Ta = 25°C
0.4
VGS = −2.5V
0.3
0.2
−4V
0.1
0
0
−0.5
−1.0
−1.5
−2.0
Drain current I_D (A)
R_{DS (ON)} – V_GS (MOSFET)
1.0
Common Source
ID = −0.5 A
0.8
0.6
0.4
Ta = 85°C
25°C
0.2
−25°C
0
0
−3
−6
−9
−12
Gate-Source voltage V_GS (V)
R_{DS (ON)} – Ta (MOSFET)
0.6
Common Source
ID = −0.5 A
0.5
VGS = −2.5 V
0.4
0.3
0.2
−4 V
0.1
0
−25
0
25
50
75
100
Ambient temperature Ta (°C)
V_th – Ta (MOSFET)
−1.2
Common Source
VDS = −3V
−1.0
ID = −0.1 mA
−0.8
−0.6
−0.4
−0.2
0
−25
0
25
50
75
100
Ambient temperature Ta (°C)
5
2007-11-01