MIG200J6CMB1W Datasheet, PDF (5/11 Pages) Toshiba Semiconductor – High Power Switching Applications Motor Control Applications

2. Control stage (T_j = 25°C)
Characteristics
Control circuit current
High side
Low side
Input on signal voltage
Input off signal voltage
Fault output current
Protection
Normal
Over current protection
trip level
Inverter
Short circuit protection trip
level
Inverter
Over current cut-off time
Over temperature
protection
Trip level
Reset level
Control supply under
voltage protection
Trip level
Reset level
Fault output pulse width
Symbol
I_{D (H)}
I_{D (L)}
V_{IN (on)}
V_{IN (off)}
I_{FO (on)}
I_{FO (off)}
OC
SC
t_{off (OC)}
OT
OTr
UV
UVr
t_FO
Test Condition
V_D = 15 V
V_D = 15 V
V_D = 15 V
V_D = 15 V, T_j ^<= 125°C
V_D = 15 V, T_j ^<= 125°C
V_D = 15 V
Case temperature
¾
V_D = 15 V
3. Thermal resistance (Tc = 25°C)
Characteristics
Junction to case thermal resistance
Case to fin thermal resistance
Symbol
R_{th (j-c)}
R_{th (c-f)}
Test Condition
IGBT
FRD
Compound is applied
MIG200J6CMB1W
Min Typ. Max Unit
¾
13
17
mA
¾
39
51
1.4 1.6 1.8
V
2.2 2.5 2.8
¾
10
12
mA
¾
¾
0.1
320 ¾
¾
A
320 ¾
¾
A
¾
5
¾
ms
110 118 125
°C
¾
98
¾
11.0 12.0 12.5
V
12.0 12.5 13.0
1
2
3
ms
Min Typ. Max Unit
¾
¾ 0.125
°C/W
¾
¾ 0.195
¾ 0.013 ¾ °C/W
5
2002-07-22