GT25Q301_06 Datasheet, PDF (5/7 Pages) Toshiba Semiconductor – Silicon N Channel IGBT High Power Switching Applications

C – V_CE
10000
3000
1000
Cies
300
100
Common emitter
30 ^{VGE = 0}
f = 1 MHz
Tc = 25°C
10
0.1 0.3 1
3
Coes
Cres
10 30 100 300 1000
Collector-emitter voltage V_CE (V)
I_F – V_F
50
Common emitter _−40
VGE = 0
40
25
30
20
10 _{Tc = 125°C}
0
0
1
2
3
4
5
Forward voltage V_F (V)
GT25Q301
V_CE, V_GE – Q_G
1000
20
Common emitter
RL = 12 Ω
Tc = 25°C
800
16
400
600
600
12
400
VCE = 200 V
8
200
4
0
0
0
40
80
120
160
200
Gate charge Q_G (nC)
t_rr, I_rr – I_F
100
1000
30
trr
10
100
Irr
Common emitter
3
di/dt = −200 A/μs
VGE = 0
: Tc = 25°C
: Tc = 125°C
1
10
0
5
10
15
20
25
30
Forward current I_F (A)
Safe Operating Area
100
IC max (pulsed)*
50
30 ^{IC max (continuous)}
100 μs*
50 μs*
10
5
DC operation
3
*: Single
1
nonrepetitive
pulse Tc = 25°C
0.5 _{Curves must be}
0.3 ^{derated linearly with}
increase in
temperature.
0.1
1
3
10 30
1 ms*
10 ms*
100 300 1000 3000
Collector-emitter voltage V_CE (V)
Reverse Bias SOA
100
50
30
10
5
3
1
0.5
Tj ≤ 125°C
0.3
VGE = ±15 V
RG = 43 Ω
0.1
1
3
10
30
100 300 1000 3000
Collector-emitter voltage V_CE (V)
5
2006-11-01