2SK3633 Datasheet, PDF (5/6 Pages) Toshiba Semiconductor – Silicon N-Channel MOS Type Switching Regulator Applications

2SK3633
SAFE OPERATING AREA
100
ID max (PULSED)*
10 ^{ID max (CONTINUOUS) *}
100 μs*
1 ms*
1
DC OPERATION
Tc = 25°C
*SINGLE NONREPETITIVE PULSE
0.1
Tc = 25°C
CURVES MUST BE DERATED
LINEARLY WITH INCREASE IN
TEMPERATURE.
0.01
1
10
100
VDSS max
1000
10000
Drain-source voltage V_DS (V)
E_AS – T_ch
500
400
300
200
100
0
25
50
75
100
125
150
Channel temperature (initial) T_ch (°C)
15 V
−15 V
B_VDSS
I_AR
V_DD
V_DS
Test circuit
R_G = 25 Ω
V_DD = 90 V, L = 15.7 mH
Waveform
Ε_AS
=
1
2
⋅
L
⋅I2
⋅
⎜⎜⎝⎛
BVDSS
BVDSS ^− VDD
⎟⎟⎠⎞
5
2006-11-10