2SK3567_06 Datasheet, PDF (5/6 Pages) Toshiba Semiconductor – Silicon N Channel MOS Type Switching Regulator Applications

2SK3567
r_th – t_w
10
1
Duty=0.5
0.2
0.1
0.1
0.05
0.02
0.01
0.01
0.001
10μ
100μ
SINGLE PULSE
PDM
t
T
Duty = t/T
Rth _(ch-c) = 3.57°C/W
1ｍ
10ｍ
100ｍ
1
10
PULSE WIDTH t_w (s)
SAFE OPERATING AREA
100
ID max (PULSED) *
10
ID max (CONTINUOUS) *
100 μs *
1 ms *
1 ^{DC OPERATION}
Tc = 25°C
0.1
※ SINGLE NONREPETITIVE PULSE
Tc=25℃
CURVES MUST BE DERATED
LINEARLY WITH INCREASE IN
TEMPERATURE.
0.01
1
10
VDSS max
100
1000
DRAIN-SOURCE VOLTAGE V_DS (V)
E_AS – T_ch
240
200
160
120
80
40
0
25
50
75
100
125
150
CHANNEL TEMPERATURE (INITIAL)
T_ch (°C)
15 V
−15 V
B_VDSS
I_AR
V_DD
V_DS
TEST CIRCUIT
WAVE FORM
R_G = 25 Ω
V_DD = 90 V, L = 28.8mH
Ε_AS
=
1
2
⋅L
⋅I2
⋅
⎜⎜⎝⎛
BVDSS
BVDSS ^− VDD
⎟⎟⎠⎞
5
2006-11-08