2SK3466_06 Datasheet, PDF (5/6 Pages) Toshiba Semiconductor – Silicon N Channel MOS Type Chopper Regulator Applications

2SK3466
r_th − t_w
3
1
Duty = 0.5
0.5
0.3 _0.2
0.1
0.1
0.05
0.05 _0.02
0.03 _0.01
Single pulse
PDM
t
0.01
0.005
T
Duty = t/T
Rth _(ch-c) =2.5°C/W
0.003
10 μ 30 μ 100 μ 300 μ 1 m 3 m 10 m 30 m 100 m 300 m 1
3
10
Pulse width tw (s)
Safe operating area
100
50
30 _{ID max (pulsed) *}
10
5 ^{ID max (continuous) *}
3
1
DC operation
0.5
Tc = 25°C
0.3
100 μs *
1 ms *
* Single nonrepetitive
0.1
pulse Tc = 25°C
0.05 Curves must be derated
0.03 _{linearly with increase in}
temperature.
0.01
1
3 5 10
30 50
VDSS max
100
300 500 1000
Drain-source voltage VDS (V)
E_AS – T_ch
200
160
120
80
40
0
25
50
75
100
125
150
Channel temperature (initial) Tch (°C)
15 V
−15 V
B_VDSS
I_AR
V_DD
V_DS
Test circuit
R_G = 25 Ω
V_DD = 90 V, L = 12.2 mH
Wave form
Ε_AS
=
1
2
⋅L ⋅I2
⋅
⎜⎜⎝⎛
BVDSS
BVDSS ^− VDD
⎟⎟⎠⎞
5
2006-11-06