2SJ669 Datasheet, PDF (5/6 Pages) Toshiba Semiconductor – Silicon P-Channel MOS Type Relay Drive, DC/DC Converter and Motor Drive Applications

2SJ669
r_th − t_w
10
1
Duty = 0.5
0.2
0.1
0.1
0.05
0.02
0.01
0.01
Single pulse
0.001
100 μ
1m
10 m
100 m
1
Pulse width t_w (s)
PDM
t
T
Duty = t/T
Rth _(ch-a) = 104°C/W
10
100
Safe operating area
100
ID max (Pulsed) *
10
ID max (Continuous)
100 μs *
1 ms *
1
DC operation
Ta = 25°C
0.1
0.01
0.001
*:Single nonrepetitive pulse
Tc = 25°C
Curves must be derated
linearly with increase in
temperature.
0.1
1
VDSS max
10
100
Drain−source voltage V_DS (V)
E_AS – T_ch
50
40
30
20
10
0
25
50
75
100
125
150
Channel temperature (initia) Tch (°C)
0V
−15 V
B_VDSS
I_AR
V_DD
V_DS
Test circuit
R_G = 25 Ω
V_DD = −25 V, L = 2.2 mH
Waveform
Ε_AS
=
1
2
⋅
L
⋅I2
⋅
⎜⎜⎝⎛
BVDSS
BVDSS ^− VDD
⎟⎟⎠⎞
5
2006-11-17