TPCS8209 Datasheet, PDF (4/7 Pages) Toshiba Semiconductor – High performance, Low Cost 20 pin OTP

5
2
43
4
1.9
1.8
3
I_D – V_DS
1.7
Common source
Ta = 25°C
Pulse test
1.6
2
1.5
1
VGS = 1.4 V
0
0
0.4
0.8
1.2
1.6
2.0
Drain-source voltage V_DS (V)
TPCS8209
10
432
8
6
I_D – V_DS
1.9
Common source
Ta = 25°C
Pulse test
1.8
1.7
4
1.6
2
1.5
VGS = 1.4 V
0
0
1
2
3
4
5
Drain-source voltage V_DS (V)
I_D – V_GS
10
Common source
VDS = 10 V
8
Pulse test
6
4
100 25
2
Ta = −55°C
0
0
1
2
3
4
5
Gate-source voltage V_GS (V)
V_DS – V_GS
2
Common source
Ta = 25°C
1.6
Pulse test
1.2
0.8
0.4
1.25
2.5
5
ID = 10 A
0
0
2
4
6
8
10
Gate-source voltage V_GS (V)
100
50
30
10
5
3
1
0.1
|Y_fs| – I_D
Ta = −55°C
25
100
Common source
VDS = 10 V
Pulse test
1
10
Drain current I_D (A)
100
50
30
10
5
3
1
0.1
4
R_{DS (ON)} – I_D
VGS = 2 V
2.5
4
Common source
Ta = 25°C
Pulse test
1
10
Drain current I_D (A)
2002-01-17