TPCS8104 Datasheet, PDF (4/7 Pages) Toshiba Semiconductor – TOSHIBA Field Effect Transistor Silicon P Channel MOS Type

−10
−10
−3
−5
−4
−8
−6
−4
−2
I_D – V_DS
−2.5
−2.4
Common source
Ta = 25°C
Pulse test
−2.3
−2.2
−2.1
VGS = −2 V
0
0
−2
−4
−6
−8
−10
Drain-source voltage V_DS (V)
TPCS8104
−20
−10
−16
−12
−8
−4
I_D – V_DS
−3 −2.7
−5
−4
−2.6
−2.5
Common source
Ta = 25°C
Pulse test
−2.4
−2.3
−2.2
VGS = −2.1 V
0
0
−4
−8
−12
−16
−20
Drain-source voltage V_DS (V)
I_D – V_GS
−40
Common source
VDS = −10 V
Pulse test
−30
−20
−10
25
100
Ta = −55°C
0
0
−1
−2
−3
−4
−5
Gate-source voltage V_GS (V)
V_DS – V_GS
−0.5
Common source
Ta = 25°C
−0.4
Pulse test
−0.3
−0.2
ID = −11 A
−5.5
−0.1
−2.5
0
0
−4
−8
−12
−16
−20
Gate-source voltage V_GS (V)
|Y_fs| – I_D
100
50
30
Ta = −55°C
25
10
100
5
3
1
0.5
0.3
−0.1
−0.3 −0.5 −1
Common source
VDS = −10 V
Pulse test
−3 −5 −10
−30 −50
Drain current I_D (A)
R_{DS (ON)} – I_D
100
50
30
VGS = −4.5 V
10
5
−10
3
1
0.5
0.3
−0.1
−0.3 −0.5 −1
Common source
Ta = 25°C
Pulse test
−3 −5 −10
−30 −50
Drain current I_D (A)
4
2002-04-05