TPCF8304 Datasheet, PDF (4/7 Pages) Toshiba Semiconductor – TOSHIBA Field Effect Transistor Silicon P-Channel MOS Type (U-MOS IV)

I_D – V_DS
-5
-10
-3.5
Common source
Ta = 25°C
-6
-3.0
Pulse test
-4
-4.5
-2.8
-3
-2.7
-2.6
-2
-2.5
-1
VGS = -2.3
0
0
-0.2
-0.4
-0.6
-0.8
-1.0
Drain-source voltage VDS (V)
TPCF8304
-10
-10
-8
I_D – V_DS
-3.5
-3.0
-4.5
-6
Common source
Ta = 25°C
Pulse test
-6
-2.8
-4
-2.7
-2.6
-2.5
-2
VGS = -2.3 V
0
0
-1
-2
-3
-4
-5
Drain-source voltage VDS (V)
-8
Common source
VDS = -10 V
Pulse test
-6
I_D – V_GS
-4
-2
Ta = −55°C
100
25
0
0
-1
-2
-3
-4
-5
Gate-source voltage VGS (V)
V_DS – V_GS
-2.0
Common source
Ta= 25℃
-1.6
Pulse test
-1.2
-0.8
-0.4
0
0
-1.6
ID = -3.2A
-0.8
-2
-4
-6
-8
-10
Gate-source voltage VGS (V)
⎪Y_fs⎪ – I_D
100
Common source
VDS = -10 V
Pulse test
Ta = −55°C
10
100
25
1000
R_{DS (ON)} – I_D
Common source
Ta = 25°C
Pulse test
100
VGS = -4.5 V
-10
1
-0.1
-0.3
-1
-3
-10
Drain current ID (A)
10
0.1
4
-1
-10
Drain current ID (A)
2006-11-17