TPCF8102 Datasheet, PDF (4/7 Pages) Toshiba Semiconductor – Field Effect Transistor Silicon P Channel MOS Type (U-MOS III)

I_D – V_DS
−5
−5
−2.5 −1.9
−1.8
−1.7
−4.5
−4
−2
−3
−4
−1.6
−3
−2
−1.5
−1
VGS = −1.4 V
Common source
Ta = 25°C Pulse test
0
0
−0.2
−0.4
−0.6
−0.8
−1.0
Drain-source voltage V_DS (V)
TPCF8102
−10
−2.5
−2
−3
−8
−4
−5
−6
−4
−2
I_D – V_DS
Common source
Ta = 25°C Pulse test
−1.9
−1.8
−1.7
−1.6
−1.5
VGS = −1.4 V
0
0
−1
−2
−3
−4
−5
Drain-source voltage V_DS (V)
I_D – V_GS
−10
Common source
VDS = −10 V
Pulse test
−8
−6
−4
Ta = 25°C
−2
Ta = −55°C
Ta = 100°C
0
0
−0.5
−1.0
−1.5
−2.0
−2.5
Gate-source voltage V_GS (V)
100
Common source
|Y_fs| – I_D
VDS = −10 V
Pulse test
Ta = −55°C
Ta = 25°C
10
Ta = 100°C
1
−0.5
−0.4
−0.3
−0.2
−0.1
0
0
V_DS – V_GS
Common source
Ta = 25°C
Pulse test
ID = −6 A
−3 A
−1.5 A
−2
−4
−6
−8
−10
Gate-source voltage V_GS (V)
1000
Common source
Ta = 25°C
Pulse test
R_{DS (ON)} – I_D
100
−1.8 V
−2.5 V
VGS = −4.5 V
10
0.1
−0.1
−1
−10
Drain current I_D (A)
−100
1
−0.1
4
−1
−10
Drain current I_D (A)
−100
2004-07-06